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NLX3G16DMUTCG

Onsemi

NLX3G16DMUTCG by Onsemi

NLX3G16DMUTCG by Onsemi is a Logic Gates IC with 12ns propagation delay, 1.8V nominal voltage, and 15pF load capacitance. Ideal for military applications due to its CMOS technology, it features a small outline package with dual terminals and operates in temperatures ranging from -55°C to 125°C.

Median Price

$0.143

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 118,000 parts In-Stock

1+ parts

-

100+ parts

$0.143

1k+ parts

$0.118

10k+ parts

$0.105

118,000

-

$0.143

$0.118

$0.105

DigiKey

USA . 118,000 parts In-Stock

1+ parts

-

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$0.180

118,000

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-

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$0.180

Farnell

UK . 118,000 parts In-Stock

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-

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$0.157

118,000

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$0.157

Verical

USA . 81,000 parts In-Stock

1+ parts

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$0.132

81,000

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$0.132

Mouser Electronics

USA . 2,617 parts In-Stock

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$0.129

2,617

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$0.129

Flip Electronics (Authorized)

USA . 395 parts In-Stock

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-

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395

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Distributors (In-Stock)

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Digiode

USA . 1,897 parts In-Stock

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$0.116

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1,897

$0.116

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Vyrian

USA . 1,644 parts In-Stock

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$0.122

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1,644

$0.122

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Chip Stock

USA . 16,000 parts In-Stock

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16,000

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Flip Electronics

USA . 395 parts In-Stock

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395

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 591 parts In-Stock

1+ parts

$0.110

100+ parts

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591

$0.110

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Corohmni

South Africa . 358 parts In-Stock

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$0.122

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358

$0.122

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Continental Prestige Electronics

USA . 120,000 parts In-Stock

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$0.124

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120,000

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$0.124

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QUARKTWIN TECHNOLOGY LTD

USA . 12,457 parts In-Stock

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Microchip USA

USA . 6,063 parts In-Stock

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6,063

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TANS Electronics

Latvia . 5,289 parts In-Stock

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5,289

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Problanco Electronics

Mexico . 5,174 parts In-Stock

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5,174

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SupplyDigital Components

Austria . 4,015 parts In-Stock

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4,015

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Kulean Microsystems

USA . 3,620 parts In-Stock

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3,620

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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UHIMA Technologies

Türkiye . 131 parts In-Stock

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131

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Overview

Enhance your electronic designs with the NLX3G16DMUTCG logic gates by Onsemi. With a reputation for top-notch quality and reliability, Onsemi delivers a superior product that exceeds expectations. Ideal for a wide range of applications, these logic gates offer fast propagation delay, low power consumption, and high performance. Increase efficiency and streamline your projects with the value and benefits that the NLX3G16DMUTCG provides. Trust Onsemi to deliver excellence in every detail.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials are lightweight and durable, making the product suitable for a variety of applications.

Propagation Delay At Nominal Supply: 12 ns

Low propagation delay ensures fast signal transmission, making this product ideal for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and labor costs.

Nominal Supply Voltage / Vsup (V): 1.8

Low nominal supply voltage helps in reducing power consumption and heat generation in the circuit.

Maximum Operating Temperature: 125 °C

Wide operating temperature range ensures the product can be used in various environmental conditions without compromising performance.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, making the product energy-efficient and reliable.

Technical Specifications

Logic Gates NLX3G16DMUTCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

3G

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e4

Length:

1.95 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

3

No. of Inputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

12 ns

Propagation Delay (tpd):

12 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1 mm

Trade Compliance

NLX3G16DMUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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