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NLVVHC1GU04DFT2G

Onsemi

NLVVHC1GU04DFT2G by Onsemi

NLVVHC1GU04DFT2G by Onsemi is a CMOS Logic Gate with 15.5ns Propagation Delay, operating b/w -55 to 125 °C. This AEC-Q100 screened device has a supply voltage range of 2-5.5V and is ideal for military-grade applications requiring fast signal processing in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Flip Electronics (Authorized)

USA . 671,850 parts In-Stock

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Flip Electronics

USA . 671,850 parts In-Stock

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Vyrian

USA . 7,594 parts In-Stock

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Digiode

USA . 1,866 parts In-Stock

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Vigor

Singapore . 500 parts In-Stock

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$0.130

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Microchip USA

USA . 3,606 parts In-Stock

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$2.925

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AZTECH Wire

Italy . 1,048 parts In-Stock

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$17.900

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Authorized Procurement Solutions

USA . 40,000 parts In-Stock

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Infinite Electronics LLP (Excess)

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TANS Electronics

Latvia . 3,548 parts In-Stock

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SupplyDigital Components

Austria . 3,028 parts In-Stock

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Problanco Electronics

Mexico . 2,595 parts In-Stock

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Kulean Microsystems

USA . 761 parts In-Stock

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Corohmni

South Africa . 410 parts In-Stock

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UHIMA Technologies

Türkiye . 396 parts In-Stock

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Corphita

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Overview

Enhance your electronic projects with the NLVVHC1GU04DFT2G logic gate by Onsemi. Manufactured with top-notch quality and designed for high performance, this product offers reliability and efficiency in various applications. From automotive to industrial settings, this logic gate delivers seamless functionality and precise results. Experience the value and benefits of this component as it provides exceptional performance, making it a must-have for any electronics enthusiast or professional. Unlock the advantages of Onsemi's expertise and take your projects to the next level with the NLVVHC1GU04DFT2G logic gate.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable and rugged applications.

Surface Mount: YES

Allows for easy and efficient mounting on circuit boards, saving space and reducing assembly time.

Screening Level: AEC-Q100

Meets automotive industry standards for reliability and quality, ensuring high performance in harsh environments.

Propagation Delay (tpd): 15.5 ns

Low propagation delay ensures fast signal processing, making the product suitable for high-speed applications.

Maximum Operating Temperature: 125 °C

Can withstand high operating temperatures, making it suitable for industrial and automotive applications.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and good solderability, ensuring reliable connections.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Technical Specifications

Logic Gates NLVVHC1GU04DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Propagation Delay (tpd):

15.5 ns

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLVVHC1GU04DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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