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NLVVHC1G00DFT2G

Onsemi

NLVVHC1G00DFT2G by Onsemi

NLVVHC1G00DFT2G by Onsemi is a CMOS Logic Gate with 2 inputs, 10 ns propagation delay at 3V. It operates in temperature range of -55 to 125 °C and has a load capacitance of 50 pF. Suitable for applications requiring fast signal processing in automotive electronics.

Median Price

$0.061

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 35,563 parts In-Stock

1+ parts

$0.320

100+ parts

$0.112

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$0.071

10k+ parts

$0.049

35,563

$0.320

$0.112

$0.071

$0.049

Chip1Stop

Japan . 100 parts In-Stock

1+ parts

$0.770

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$0.161

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100

$0.770

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EBV Elektronik

Germany . 21,000 parts In-Stock

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Mouser Electronics

USA . 9,745 parts In-Stock

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$0.045

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$0.045

Arrow

USA . 6,000 parts In-Stock

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$0.061

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Verical

USA . 6,000 parts In-Stock

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Vyrian

USA . 1,021 parts In-Stock

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$0.045

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Digiode

USA . 2,462 parts In-Stock

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$0.304

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Flip Electronics

USA . 7,287,547 parts In-Stock

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TME

Poland . 21,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 5,699 parts In-Stock

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ComSIT USA

USA . 5,699 parts In-Stock

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Prism Electronics

USA . 14 parts In-Stock

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Corohmni

South Africa . 457 parts In-Stock

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$0.045

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Corphita

USA . 281 parts In-Stock

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$0.288

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Microchip USA

USA . 5,535 parts In-Stock

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$0.961

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Perfect Parts

USA . 25,043 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 19,446 parts In-Stock

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Metaverse IC Inc.

Canada . 9,000 parts In-Stock

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Problanco Electronics

Mexico . 6,630 parts In-Stock

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Kulean Microsystems

USA . 5,297 parts In-Stock

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TANS Electronics

Latvia . 3,578 parts In-Stock

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Authorized Procurement Solutions

USA . 2,760 parts In-Stock

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Lixinc

USA . 986 parts In-Stock

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Vigor

Singapore . 265 parts In-Stock

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SupplyDigital Components

Austria . 257 parts In-Stock

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GreenTree Electronics

Israel . 100 parts In-Stock

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UHIMA Technologies

Türkiye . 33 parts In-Stock

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Overview

Unlock the power of reliable logic gates with the NLVVHC1G00DFT2G by Onsemi. Manufactured to the highest standards, this product offers seamless integration and superior performance in a variety of applications. With a fast propagation delay, surface-mount capability, and AEC-Q100 screening level, this logic gate is a game-changer for your projects. Trust in Onsemi's expertise and invest in quality that delivers value and efficiency every time. Elevate your designs with the NLVVHC1G00DFT2G and experience innovation at its best.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for various applications.

Propagation Delay At Nominal Supply: 10 ns

Fast response time for quick signal processing.

Surface Mount: YES

Easy to mount on PCBs, saving space and simplifying assembly.

No. of Inputs: 2

Sufficient number of inputs for basic logic operations.

Nominal Supply Voltage / Vsup (V): 3

Common voltage supply for compatibility with various systems.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for industrial environments.

Minimum Operating Temperature: -55 °C

Can operate in extreme cold temperatures as well.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Technical Specifications

Logic Gates NLVVHC1G00DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

10 ns

Propagation Delay (tpd):

15.5 ns

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLVVHC1G00DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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