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NLVVHC1G02DFT1G

Onsemi

NLVVHC1G02DFT1G by Onsemi

NLVVHC1G02DFT1G by Onsemi is a CMOS Logic Gate with 2 inputs, 10 ns propagation delay, and 3V nominal voltage. Ideal for military applications due to AEC-Q100 screening level, -55 to 125 °C operating temperature range, and small outline package style.

Median Price

$0.043

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,385 parts In-Stock

1+ parts

$0.310

100+ parts

$0.111

1k+ parts

$0.071

10k+ parts

$0.049

2,385

$0.310

$0.111

$0.071

$0.049

Rochester

USA . 72,375 parts In-Stock

1+ parts

-

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$0.044

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$0.036

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$0.033

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$0.044

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$0.033

Verical

USA . 72,375 parts In-Stock

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$0.041

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$0.041

Flip Electronics (Authorized)

USA . 15,000 parts In-Stock

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Mouser Electronics

USA . 7,670 parts In-Stock

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Digiode

USA . 255 parts In-Stock

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$0.034

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Vyrian

USA . 407 parts In-Stock

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$0.036

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Flip Electronics

USA . 15,000 parts In-Stock

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Corphita

USA . 2,413 parts In-Stock

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$0.032

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$0.032

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Corohmni

South Africa . 315 parts In-Stock

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$0.036

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Vigor

Singapore . 936 parts In-Stock

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$0.090

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Microchip USA

USA . 7,410 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,294 parts In-Stock

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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TANS Electronics

Latvia . 6,794 parts In-Stock

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Problanco Electronics

Mexico . 6,748 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 1,362 parts In-Stock

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UHIMA Technologies

Türkiye . 474 parts In-Stock

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Overview

Looking to enhance your electronic projects? Look no further than the NLVVHC1G02DFT1G by Onsemi. Crafted with precision and expertise, this logic gate delivers reliable performance and efficiency for all your circuit design needs. From automotive to industrial applications, this versatile component offers unmatched value and benefits, ensuring seamless operation and optimal functionality. Upgrade your projects today with the NLVVHC1G02DFT1G and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and reliability of the product.

Propagation Delay At Nominal Supply: 10 ns

Low propagation delay ensures fast operation of the logic gates.

Surface Mount: YES

Surface mount capability allows for easy installation and integration into circuit boards.

Screening Level: AEC-Q100

AEC-Q100 screening level certification ensures high quality standards for automotive applications.

Nominal Supply Voltage/Vsup (V): 3

Nominal supply voltage of 3V is common and compatible with many electronic systems.

No. of Inputs: 2

Having 2 inputs allows for basic logic operations.

Load Capacitance (CL): 50 pF

The load capacitance of 50 pF is suitable for many applications and ensures efficient performance.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Compact package style saves space on the circuit board and allows for efficient design layout.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for use in a wide range of environments.

Technology: CMOS

The use of CMOS technology enables low power consumption and high noise immunity.

Technical Specifications

Logic Gates NLVVHC1G02DFT1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

10 ns

Propagation Delay (tpd):

15.5 ns

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLVVHC1G02DFT1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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