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SN74LVC1G17DCKJ

Texas Instruments

SN74LVC1G17DCKJ by Texas Instruments

SN74LVC1G17DCKJ by Texas Instruments is a CMOS logic gate with 5.5 ns propagation delay at 3.3V, suitable for industrial applications. It features a Schmitt Trigger, operates b/w -40 to 85 °C, and has a load capacitance of 50 pF. This small outline package with dual terminals is ideal for surface mount designs requiring fast signal processing.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 922,770 parts In-Stock

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Digiode

USA . 1,945 parts In-Stock

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Vyrian

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Nova Conductors

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Corohmni

South Africa . 507 parts In-Stock

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$9.372

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One Stop Electronics

USA . 1,220 parts In-Stock

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AZTECH Wire

Italy . 600 parts In-Stock

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$19.270

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Parana Technologies

USA . 795 parts In-Stock

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$24.091

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$24.740

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DigiPath Technology Company

USA . 1,967 parts In-Stock

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ChromeModa Solutions

Germany . 4,564 parts In-Stock

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IDEA Electronic Components Group

UK . 169 parts In-Stock

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Ampacity Inc.

Singapore . 1,442 parts In-Stock

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Semicontronic

India . 148 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Overview

Unlock the power of efficient logic gates with the SN74LVC1G17DCKJ by Texas Instruments. Known for their high-quality manufacturing, Texas Instruments delivers reliable products that excel in performance and durability. Ideal for a variety of applications, this logic gate offers fast propagation delays and low power consumption, making it a valuable asset for your projects. Trust in Texas Instruments to provide you with the tools you need to succeed in the world of electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Propagation Delay At Nominal Supply: 5.5 ns

Fast propagation delay allows for quick response times, making this logic gate ideal for high-speed applications.

Surface Mount: YES

Surface mounting capability makes installation and integration easier and more efficient.

Nominal Supply Voltage / Vsup (V): 3.3

Compatible with a common supply voltage, making it versatile and widely usable in various electronic circuits.

Load Capacitance (CL): 50 pF

Suitable for handling moderate load capacitance, making it suitable for a wide range of applications.

Power Supplies (V): 3.3

Operates efficiently at a standard power supply voltage, ensuring reliable performance.

No. of Terminals: 5

Simple and straightforward terminal configuration, making it easy to connect in circuits.

Maximum I (ol): 24 Amp

Can handle high output currents, making it suitable for driving various loads.

Minimum Operating Temperature: -40 °C

Wide operating temperature range allows for reliable performance in extreme conditions.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures stability and performance in various environments.

Schmitt Trigger: YES

Incorporation of Schmitt Trigger ensures clean and reliable signal processing, reducing errors and noise in the output.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, contributing to energy efficiency and signal integrity.

Technical Specifications

Logic Gates SN74LVC1G17DCKJ attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

5.5 ns

Propagation Delay (tpd):

11 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

SN74LVC1G17DCKJ Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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