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NC7SZ00M5X

Onsemi

NC7SZ00M5X by Onsemi

The Onsemi NC7SZ00M5X is a CMOS Logic Gate with 2 inputs, 10ns propagation delay, and 1.8V nominal voltage. Ideal for industrial applications, it features a small outline package with matte tin finish and operates b/w -40 to 85°C temperature range.

Median Price

$0.062

Lifecycle Status

Suppliers In-Stock

46

In-Stock Inventory

1k+

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Arrow

USA . 67 parts In-Stock

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Newark

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Adafruit Industries

USA . 600 parts In-Stock

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Chip1Stop

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Verical

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Element14

Singapore . 558 parts In-Stock

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Digiode

USA . 1,441 parts In-Stock

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NAC Semi

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Maritex

Poland . 12,010 parts In-Stock

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Nova Conductors

Japan . 74 parts In-Stock

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Forefront Electronics and Design

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Türkiye . 2 parts In-Stock

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LIBRA Elektronik GmbH

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Sogenti Electronics

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Atlantic Semiconductor

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Component Stockers USA

USA . 81,620 parts In-Stock

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Ampacity Inc.

Singapore . 20,234 parts In-Stock

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Corohmni

South Africa . 163 parts In-Stock

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Corphita

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Advanced Electronics

New Zealand . 600 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Netroflash

USA . 2,000 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,866 parts In-Stock

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Perfect Parts

USA . 271,363 parts In-Stock

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Eastek

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UK . 24,177 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Glotronic Ltd.

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Lixinc

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Israel . 10,368 parts In-Stock

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Kepictronics

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Authorized Procurement Solutions

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A-Z Elektronik GmbH

Germany . 7,332 parts In-Stock

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SupplyDigital Components

Austria . 7,247 parts In-Stock

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iodParts Technologies Inc.

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Mexico . 5,987 parts In-Stock

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Microchip USA

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Latvia . 1,509 parts In-Stock

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UHIMA Technologies

Türkiye . 957 parts In-Stock

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Robosynatics

Brazil . 956 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality NC7SZ00M5X logic gate from Onsemi. Built by a reputable manufacturer, this small outline, low profile device offers fast propagation delays and dual input terminals for efficient operation. Ideal for industrial applications, this logic gate provides a reliable solution with its wide operating temperature range and low power consumption. Upgrade your design with the NC7SZ00M5X and experience enhanced performance and reliability in your circuits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for the package body ensures the product is reliable and easy to handle.

Propagation Delay At Nominal Supply: 10 ns

Fast propagation delay at nominal supply voltage allows for quick response times in processing signals, making it suitable for time-sensitive applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient integration onto circuit boards, saving space and simplifying assembly.

No. of Inputs: 2

Having 2 inputs provides flexibility in logic operations and allows for more complex logic functions to be performed.

Nominal Supply Voltage / Vsup: 1.8V

Low nominal supply voltage reduces power consumption and makes the product suitable for low-power applications.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures the product can be used in a wide range of environments without risk of overheating.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable in noisy environments.

Technical Specifications

Logic Gates NC7SZ00M5X attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2.9 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

50 mA

Propagation Delay At Nominal Supply:

10 ns

Propagation Delay (tpd):

12 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.6 mm

Trade Compliance

NC7SZ00M5X Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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