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NLVVHC1G03DFT1G

Onsemi

NLVVHC1G03DFT1G by Onsemi

NLVVHC1G03DFT1G by Onsemi is a CMOS Logic Gate with 2 inputs, 10 ns propagation delay at 5V. It operates in temperatures from -55 to 125 °C and has a load capacitance of 50 pF. Ideal for applications requiring fast signal processing in automotive electronics.

Median Price

$0.100

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Avnet

USA . 3,000 parts In-Stock

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Component Sense

UK . 37,877 parts In-Stock

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Vyrian

USA . 8,726 parts In-Stock

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Digiode

USA . 1,484 parts In-Stock

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Corohmni

South Africa . 338 parts In-Stock

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Component Stockers USA

USA . 22,704 parts In-Stock

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$0.490

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$0.190

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$0.050

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$0.050

Kepictronics

USA . 306,000 parts In-Stock

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Kulean Microsystems

USA . 6,203 parts In-Stock

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Microchip USA

USA . 4,382 parts In-Stock

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Problanco Electronics

Mexico . 2,160 parts In-Stock

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TANS Electronics

Latvia . 2,109 parts In-Stock

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SupplyDigital Components

Austria . 1,287 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 219 parts In-Stock

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Overview

Upgrade your electronics with the NLVVHC1G03DFT1G logic gate from Onsemi. This high-quality component offers fast propagation delay, reliable performance, and open-drain output characteristics. Perfect for a wide range of applications, this logic gate is ideal for automotive, industrial, and consumer electronics. With Onsemi's reputation for excellence in manufacturing and the value this product brings to your projects, you can trust that you're getting the best in quality and reliability. Elevate your designs with the NLVVHC1G03DFT1G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and reliability for long-term usage.

Propagation Delay At Nominal Supply: 10 ns

Low propagation delay ensures fast response times in processing signals.

Surface Mount: YES

Allows for easy installation and integration into circuit boards.

Screening Level: AEC-Q100

Compliance with AEC-Q100 standards ensures high quality and reliability for automotive applications.

No. of Inputs: 2

Suitable for basic logic operations with two input signals.

Nominal Supply Voltage / Vsup (V): 5

Operates efficiently at a standard voltage of 5V.

Load Capacitance (CL): 50 pF

Optimized for handling a load capacitance of 50 pF.

No. of Terminals: 5

Compact design with minimal terminals for space-saving installations.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Compact package style with thin profile for space-constrained applications.

Maximum I (ol): 8 Amp

High output current capacity allows for driving external loads.

Propagation Delay (tpd): 15.5 ns

Short propagation delay ensures quick signal processing.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures without performance degradation.

Output Characteristics: OPEN-DRAIN

Open-drain output configuration provides flexibility in connecting to other components.

Minimum Operating Temperature: -55 °C

Can withstand cold temperatures for reliable operation in various environments.

Terminal Finish: MATTE TIN

Matte tin finish for corrosion resistance and solderability.

Terminal Position: DUAL

Dual terminal position for secure connections and stability.

Maximum Seated Height: 1.1 mm

Low profile design for space-saving installations.

Width: 1.25 mm

Compact width for fitting into tight spaces on a circuit board.

Minimum Supply Voltage (Vsup): 2 V

Can operate at a low supply voltage of 2V.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures reliability during the solder reflow process with a maximum time limit.

Peak Reflow Temperature °C: 260

High peak reflow temperature for secure solder joints.

Length: 2 mm

Compact length for space-saving installation.

Temperature Grade: MILITARY

Military-grade temperature specifications for robust performance in harsh environments.

Technology: CMOS

CMOS technology for efficient power consumption and high-speed operation.

Terminal Form: GULL WING

Gull wing terminal form for easy soldering and secure connections.

Packing Method: TR

TR packing method for convenient handling and storage.

Terminal Pitch: 0.65 mm

Optimal terminal pitch for reliable connections on a circuit board.

Maximum Supply Voltage (Vsup): 5.5 V

Safe maximum supply voltage of 5.5V for stable operation.

Maximum Power Supply Current (ICC): 0.04 mA

Low power supply current for energy-efficient performance.

Technical Specifications

Logic Gates NLVVHC1G03DFT1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

10 ns

Propagation Delay (tpd):

15.5 ns

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLVVHC1G03DFT1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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