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NLVVHC1G132DFT2G

Onsemi

NLVVHC1G132DFT2G by Onsemi

NLVVHC1G132DFT2G by Onsemi is a CMOS Logic Gate with 2 inputs, 12.3 ns propagation delay, and 3V nominal voltage. Ideal for military applications due to its AEC-Q100 screening level and operating temperature range of -55°C to 125°C. Package style: Small Outline, Thin Profile, Shrink Pitch.

Median Price

$0.033

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Arrow

USA . 3,000 parts In-Stock

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Chip1Stop

Japan . 6,000 parts In-Stock

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$0.049

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$0.039

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Future Electronics

Canada . 6,000 parts In-Stock

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Verical

USA . 3,000 parts In-Stock

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Digiode

USA . 223 parts In-Stock

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Chip Stock

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NAC Semi

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Vyrian

USA . 7,564 parts In-Stock

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Nova Conductors

Japan . 870 parts In-Stock

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Semicontronic

India . 10,384 parts In-Stock

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Ampacity Inc.

Singapore . 10,359 parts In-Stock

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Corohmni

South Africa . 342 parts In-Stock

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Corphita

USA . 438 parts In-Stock

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Vigor

Singapore . 325 parts In-Stock

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Microchip USA

USA . 8,843 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,949 parts In-Stock

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AZTECH Wire

Italy . 1,132 parts In-Stock

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Continental Prestige Electronics

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TANS Electronics

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Problanco Electronics

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Kulean Microsystems

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Argo Parts USA

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Bastille Electronics

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SupplyDigital Components

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UHIMA Technologies

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Overview

Discover the superior performance and reliability of the NLVVHC1G132DFT2G logic gate by Onsemi. Crafted with precision and expertise, this product boasts unparalleled quality and efficiency, making it ideal for various applications. From automotive to industrial uses, this logic gate offers customers exceptional value and benefits, ensuring seamless operation and optimal functionality. Trust Onsemi to deliver cutting-edge technology that exceeds expectations. Experience innovation at its finest with the NLVVHC1G132DFT2G logic gate.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and resistant to damage, making the product reliable for long-term use.

Propagation Delay At Nominal Supply: 12.3 ns

Low propagation delay ensures fast signal processing and high-speed operation of the logic gate.

Surface Mount: YES

Surface mount technology enables easy and convenient installation on circuit boards.

Screening Level: AEC-Q100

Compliance with AEC-Q100 standards ensures high reliability and quality, suitable for automotive applications.

No. of Inputs: 2

Having two inputs provides flexibility in logic operations and allows for various combinations in circuit design.

Nominal Supply Voltage / Vsup (V): 3

Compatible with a standard supply voltage of 3V, making it versatile for a wide range of applications.

Load Capacitance (CL): 50 pF

Suitable for driving moderate capacitance loads efficiently, ensuring stable operation.

Maximum I (ol): 8 Amp

High output current capability allows for driving strong loads without external amplification.

Temperature Grade: MILITARY

Military-grade temperature ratings ensure reliable performance in harsh environmental conditions.

Schmitt Trigger: YES

Incorporation of a Schmitt trigger ensures noise immunity and clean signal transitions, improving overall circuit reliability.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the logic gate energy-efficient and reliable.

Technical Specifications

Logic Gates NLVVHC1G132DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

12.3 ns

Propagation Delay (tpd):

19.6 ns

Schmitt Trigger:

YES

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Sub-Category:

Gate

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLVVHC1G132DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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