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NC7SZ02P5X

Onsemi

NC7SZ02P5X by Onsemi

The Onsemi NC7SZ02P5X is a CMOS Logic Gate with 2 inputs, 5 terminals, and 12ns propagation delay. Operating at temperatures from -40 to 85°C, it has a supply voltage range of 1.65V to 5.5V making it ideal for industrial applications requiring fast signal processing in compact spaces.

Median Price

$0.040

Lifecycle Status

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Mouser Electronics

USA . 509 parts In-Stock

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Newark

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Element14

Singapore . 2,840 parts In-Stock

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Component Electronics Inc.

Canada . 29 parts In-Stock

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Advanced Electronics

New Zealand . 70 parts In-Stock

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Continental Prestige Electronics

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Aztec Data Supply Inc.

USA . 1,733 parts In-Stock

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Metaverse IC Inc.

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Israel . 33,216 parts In-Stock

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UK . 11,538 parts In-Stock

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Germany . 6,437 parts In-Stock

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Mexico . 6,234 parts In-Stock

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iodParts Technologies Inc.

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GreenTree Electronics

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Overview

Experience the seamless integration and high performance of the NC7SZ02P5X logic gate by Onsemi. Crafted with precision and quality, this small outline, thin profile package offers a blazing fast propagation delay of 5.2 ns, making it ideal for applications requiring quick response times. With a maximum seated height of just 1.1 mm, this industrial-grade CMOS technology device is perfect for space-constrained designs. Trust Onsemi's reputation for reliability and innovation to deliver superior products that exceed your expectations. Elevate your projects with the NC7SZ02P5X and experience the difference in efficiency and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protects the internal components of the logic gate.

Propagation Delay At Nominal Supply: 5.2 ns

Low propagation delay ensures fast operation and efficient performance of the logic gate.

Surface Mount: YES

Surface mount design allows for easy and secure installation on circuit boards.

Package Shape: RECTANGULAR

Rectangular shape enables easy integration of the logic gate into various electronic designs.

Nominal Supply Voltage / Vsup (V): 1.8

Operates efficiently at a low supply voltage of 1.8V, suitable for low-power applications.

Load Capacitance (CL): 50 pF

Designed to work effectively with a load capacitance of 50 pF, ensuring stable performance in different circuit configurations.

Maximum I (ol): 24 Amp

High maximum output current of 24 Amp allows for driving of heavy loads and compatibility with various circuits.

Maximum Operating Temperature: 85 °C

Can operate reliably at high temperatures up to 85°C, suitable for industrial applications.

Minimum Operating Temperature: -40 °C

Can function in extreme low temperatures down to -40°C, making it suitable for a wide range of environments.

Technology: CMOS

Uses CMOS technology for low power consumption and high noise immunity, resulting in efficient operation of the logic gate.

Technical Specifications

Logic Gates NC7SZ02P5X attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

5.2 ns

Propagation Delay (tpd):

12 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NC7SZ02P5X Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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