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NLVSXN5004MU2TAG

Onsemi

NLVSXN5004MU2TAG by Onsemi

NLVSXN5004MU2TAG by Onsemi is a 12-terminal interface IC with a max supply voltage of 4.5V and min of 0.9V, suitable for automotive applications. Featuring a rectangular package shape, it operates in temperatures ranging from -40 to 125 °C and has a terminal pitch of 0.4mm.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

< 1k

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Digiode

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Vyrian

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TANS Electronics

Latvia . 6,559 parts In-Stock

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Kulean Microsystems

USA . 5,198 parts In-Stock

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Problanco Electronics

Mexico . 2,288 parts In-Stock

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Corphita

USA . 1,180 parts In-Stock

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UHIMA Technologies

Türkiye . 872 parts In-Stock

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SupplyDigital Components

Austria . 517 parts In-Stock

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Corohmni

South Africa . 232 parts In-Stock

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Overview

Elevate your automotive electronics with the NLVSXN5004MU2TAG by Onsemi. Crafted with precision and expertise, this interface circuit offers unmatched quality and reliability. From its seamless integration to its durable plastic/epoxy body, this chip carrier delivers exceptional performance in a compact package. Whether you're enhancing vehicle communication systems or optimizing sensor interfaces, this product is designed to exceed expectations. With Onsemi's commitment to innovation and excellence, the NLVSXN5004MU2TAG guarantees value, efficiency, and unparalleled benefits for all your automotive applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is cost-effective and provides good insulation for the IC, making it durable and reliable.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards, saving time and space.

Maximum Supply Voltage: 4.5 V

With a high maximum supply voltage, this IC can handle a wide range of power inputs, making it versatile.

Screening Level: AEC-Q100

AEC-Q100 certification ensures that the IC meets automotive industry standards for reliability and performance.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy placement and alignment on the circuit board.

No. of Terminals: 12

Having 12 terminals provides flexibility in connecting the IC to other components, allowing for diverse circuit configurations.

Package Style (Meter): CHIP CARRIER, VERY THIN PROFILE

The thin profile of the chip carrier package saves space on the circuit board, ideal for compact designs.

Minimum Supply Voltage: 0.9 V

The low minimum supply voltage allows for energy-efficient operation, reducing power consumption.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this IC can withstand harsh environments and prolonged use.

Minimum Operating Temperature: -40 °C

The wide temperature range means the IC can operate reliably in both extreme hot and cold conditions.

Terminal Position: QUAD

The quad terminal position simplifies the connection layout, improving ease of assembly and reducing the risk of errors.

Maximum Seated Height: 0.55 mm

The low seated height of the IC saves vertical space on the circuit board, suitable for slim devices.

Width: 1.7 mm

The narrow width of the IC allows for compact placement on the circuit board, optimizing board space usage.

Length: 2 mm

The short length of the IC contributes to a space-efficient layout on the circuit board, ideal for small form factor designs.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this IC is built to withstand the challenging conditions of vehicle environments.

Terminal Form: NO LEAD

The no-lead terminal form reduces the risk of solder joint failure, enhancing the IC's reliability.

Terminal Pitch: 0.4 mm

The small terminal pitch allows for high-density mounting, maximizing the number of components on the circuit board.

Interface IC Type: INTERFACE CIRCUIT

As an interface circuit IC, this product facilitates communication between different parts of a system, making it essential for complex electronic devices.

Technical Specifications

Other Function Interface ICs NLVSXN5004MU2TAG attributes and parameters. Explore more Other Function Interface ICs devices from Onsemi

Specs

Interface IC Type:

JESD-30 Code:

R-PQCC-N12

Length:

2 mm

No. of Terminals:

12

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC12,.07X.08,16

Package Shape:

Package Style (Meter):

CHIP CARRIER, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Screening Level:

AEC-Q100

Maximum Seated Height:

.55 mm

Maximum Supply Voltage:

4.5 V

Minimum Supply Voltage:

.9 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.7 mm

Trade Compliance

NLVSXN5004MU2TAG Interface ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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