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NLV74HC541ADWR2G

Onsemi

NLV74HC541ADWR2G by Onsemi

NLV74HC541ADWR2G by Onsemi is an 8-bit bus driver with 28ns propagation delay, operating at a nominal voltage of 5V. It features a small outline package and is AEC-Q100 screened, suitable for military-grade applications requiring true output polarity and 3-STATE output characteristics.

Median Price

$0.383

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 1,000 parts In-Stock

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$0.357

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Verical

USA . 1,000 parts In-Stock

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Flip Electronics

USA . 1,000 parts In-Stock

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$0.260

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Vyrian

USA . 3,474 parts In-Stock

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Digiode

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Corohmni

South Africa . 259 parts In-Stock

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Vigor

Singapore . 612 parts In-Stock

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Microchip USA

USA . 3,497 parts In-Stock

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AZTECH Wire

Italy . 1,218 parts In-Stock

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$19.200

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QUARKTWIN TECHNOLOGY LTD

USA . 26,683 parts In-Stock

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TANS Electronics

Latvia . 7,607 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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Corphita

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Problanco Electronics

Mexico . 1,343 parts In-Stock

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UHIMA Technologies

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Overview

Enhance your electronic designs with the NLV74HC541ADWR2G by Onsemi, a top-tier manufacturer known for its superior quality and reliability. This advanced Bus Driver & Transceiver offers 8 bits of power with a nominal supply voltage of 5V, making it perfect for a wide range of applications. With a propagation delay of just 28ns and a maximum operating temperature of 125 °C, this product ensures optimum performance even in demanding environments. Trust Onsemi to deliver cutting-edge technology and unmatched value with the NLV74HC541ADWR2G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the bus driver/transceivers, ensuring a longer lifespan.

Propagation Delay At Nominal Supply: 28 ns

Offers fast processing speeds, allowing for quick data transmission within the bus system.

Surface Mount: YES

Simplifies the installation process and saves space on the circuit board, making it ideal for compact electronic designs.

Package Shape: RECTANGULAR

Facilitates easy integration into existing circuit layouts and reduces the risk of misalignment during installation.

Nominal Supply Voltage / Vsup (V): 5

Compatible with common power supplies, making it versatile and easy to incorporate into various electronic systems.

Maximum Operating Temperature: 125 °C

Ensures reliable performance even in high-temperature environments, making it suitable for industrial applications.

Technology: CMOS

Offers low power consumption and high noise immunity, providing efficient operation and reliable data transmission.

Technical Specifications

Bus Driver & Transceivers NLV74HC541ADWR2G attributes and parameters. Explore more Bus Driver & Transceivers devices from Onsemi

Specs

Control Type:

ENABLE LOW

Family:

HC/UH

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e3

Length:

12.8 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

6 Amp

Moisture Sensitivity Level (MSL):

3

No. of Bits:

8

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP20,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Propagation Delay At Nominal Supply:

28 ns

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

2.65 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7.5 mm

Trade Compliance

NLV74HC541ADWR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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