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NLV18VHC1GT50DFT2G

Onsemi

NLV18VHC1GT50DFT2G by Onsemi

NLV18VHC1GT50DFT2G by Onsemi is a 5-terminal logic gate with 13.5ns propagation delay at 5V, suitable for military applications. It features a max I (ol) of 8A, operating temperature range of -55 to 125 °C, and AEC-Q100 screening level for automotive use.

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1k+

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Component Stockers USA

USA . 116,139 parts In-Stock

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$0.920

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AZTECH Wire

Italy . 1,190 parts In-Stock

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SupplyDigital Components

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Problanco Electronics

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Kulean Microsystems

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Corphita

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TANS Electronics

Latvia . 1,687 parts In-Stock

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UHIMA Technologies

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Microchip USA

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Overview

Discover the NLV18VHC1GT50DFT2G by Onsemi, a top-quality logic gate that offers unmatched performance and reliability. Manufactured by industry leader Onsemi, this product is designed to meet the highest standards in the field. Ideal for a wide range of applications, this logic gate provides fast and efficient operation, making it a valuable asset for any project. Experience the benefits of seamless integration, precise output characteristics, and durable construction with the NLV18VHC1GT50DFT2G. Choose excellence, choose Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Allows for a lightweight and durable package, making it suitable for various applications.

Propagation Delay At Nominal Supply: 13.5 ns

Fast propagation delay ensures quick signal processing and high efficiency.

Surface Mount: YES

Enables easy and efficient installation on circuit boards.

Screening Level: AEC-Q100

Meets automotive industry standards for reliability and quality.

Nominal Supply Voltage / Vsup (V): 5

Compatible with common voltage supplies, ensuring widespread usability.

Load Capacitance (CL): 50 pF

Optimized load capacitance for efficient performance in signal processing.

No. of Terminals: 5

Simple interface with a small number of terminals for easy connectivity.

Output Characteristics: 3-STATE

Provides flexibility in output control, allowing for multiple output states.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, ideal for industrial and automotive environments.

Minimum Operating Temperature: -55 °C

Capable of functioning in low-temperature conditions without loss of performance.

Terminal Finish: MATTE TIN

Corrosion-resistant finish for reliable connections over an extended period.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly processes.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity.

Technical Specifications

Logic Gates NLV18VHC1GT50DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Propagation Delay At Nominal Supply:

13.5 ns

Propagation Delay (tpd):

20.5 ns

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLV18VHC1GT50DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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