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NLVVHC1GT50DFT2G

Onsemi

NLVVHC1GT50DFT2G by Onsemi

NLVVHC1GT50DFT2G by Onsemi is a CMOS Logic Gate with 10ns Propagation Delay, suitable for military applications. It operates at 5V with load capacitance of 50pF and can handle up to 8A current. This small outline package has dual terminals and meets AEC-Q100 screening standards.

Median Price

$43.060

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 36,000 parts In-Stock

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$43.060

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36,000

$43.060

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Verical

USA . 36,000 parts In-Stock

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$43.060

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36,000

$43.060

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Chip1Stop

Japan . 24,000 parts In-Stock

1+ parts

-

100+ parts

$0.064

1k+ parts

$0.045

10k+ parts

$0.032

24,000

-

$0.064

$0.045

$0.032

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 4,651,985 parts In-Stock

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4,651,985

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Vyrian

USA . 4,993 parts In-Stock

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Digiode

USA . 561 parts In-Stock

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561

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Distributors (Availability)

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Corohmni

South Africa . 60 parts In-Stock

1+ parts

$0.064

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60

$0.064

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AZTECH Wire

Italy . 844 parts In-Stock

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$22.200

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844

$22.200

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Kulean Microsystems

USA . 6,004 parts In-Stock

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Problanco Electronics

Mexico . 5,913 parts In-Stock

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Microchip USA

USA . 5,662 parts In-Stock

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SupplyDigital Components

Austria . 4,184 parts In-Stock

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Corphita

USA . 1,591 parts In-Stock

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UHIMA Technologies

Türkiye . 545 parts In-Stock

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545

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TANS Electronics

Latvia . 130 parts In-Stock

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Overview

Looking for high-quality logic gates that offer reliable performance and versatility? Look no further than the NLVVHC1GT50DFT2G by Onsemi. With a wide range of applications and a reputation for excellence, Onsemi delivers top-notch products that exceed expectations. This logic gate provides fast propagation delay, low power consumption, and a compact design, making it the perfect choice for various electronic projects. Trust Onsemi to deliver exceptional value and unmatched benefits with the NLVVHC1GT50DFT2G logic gate.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the product suitable for various applications.

Propagation Delay At Nominal Supply: 10 ns

Low propagation delay ensures fast signal processing, making the product efficient.

Surface Mount: YES

Surface mount technology allows for easy installation and saves space on the PCB.

Screening Level: AEC-Q100

AEC-Q100 screening ensures high reliability and quality, making the product suitable for automotive applications.

Nominal Supply Voltage / Vsup (V): 5

5V supply voltage is a common standard, making this product compatible with many systems.

Load Capacitance (CL): 50 pF

Suitable load capacitance for efficient performance in various circuits.

Maximum Operating Temperature: 125 °C

High operating temperature range allows for use in extreme conditions.

Minimum Operating Temperature: -55 °C

Wide temperature range ensures functionality in cold environments.

Technology: CMOS

Complementary Metal-Oxide-Semiconductor technology provides low power consumption and high noise immunity.

Technical Specifications

Logic Gates NLVVHC1GT50DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3/5

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

10 ns

Propagation Delay (tpd):

25.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.25 mm

Trade Compliance

NLVVHC1GT50DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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