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SN74LVC1G32DCKRG4

Texas Instruments

SN74LVC1G32DCKRG4 by Texas Instruments

SN74LVC1G32DCKRG4 by Texas Instruments is a logic gate with 2 inputs, 3.3V nominal voltage, and 4.5ns propagation delay. It is used in automotive applications due to its small outline package style and thin profile, making it suitable for high-temperature environments up to 125°C. The device features a surface-mount design with a max seated height of 1.1mm and operates within a temperature range of -40°C to 125°C.

Median Price

$0.290

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

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Texas Instruments

USA . 364,724 parts In-Stock

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Arrow

USA . 33 parts In-Stock

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Mouser Electronics

USA . 2,568 parts In-Stock

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Avnet

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Chip1Stop

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Verical

USA . 724 parts In-Stock

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Distributors (In-Stock)

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Freelance Electronics

USA . 925 parts In-Stock

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Digiode

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Nova Conductors

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TME

Poland . 630 parts In-Stock

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Chip Stock

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Connector Distribution Corp

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Right Parts Inc.

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Sea View Technologies

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Prism Electronics

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Ampacity Inc.

Singapore . 74,276 parts In-Stock

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Semicontronic

India . 74,158 parts In-Stock

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Corohmni

South Africa . 367 parts In-Stock

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Advanced Electronics

New Zealand . 60 parts In-Stock

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Corphita

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Continental Prestige Electronics

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Argo Parts USA

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Netroflash

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Modulus Dynamics

Lithuania . 50 parts In-Stock

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Parana Technologies

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DigiPath Technology Company

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ChromeModa Solutions

Germany . 4,224 parts In-Stock

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IDEA Electronic Components Group

UK . 921 parts In-Stock

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Perfect Parts

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Lucentia Tech

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Overview

Discover the exceptional quality and reliability of Texas Instruments with the SN74LVC1G32DCKRG4 Logic Gate. This versatile component offers fast propagation delays, low power consumption, and a wide operating temperature range, making it ideal for a variety of automotive applications. With its compact size and durable package body material, this logic gate provides excellent value and performance for your design needs. Trust Texas Instruments for top-notch components that deliver superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package durable and ensures long-term reliability.

Propagation Delay At Nominal Supply: 4.5 ns

Low propagation delay ensures fast signal processing, making this logic gate suitable for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a common supply voltage of 3.3V, making it compatible with a wide range of electronic systems.

Output Characteristics: 3-STATE

3-state output allows for high impedance state, providing flexibility in circuit design.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the logic gate energy-efficient and reliable.

Technical Specifications

Logic Gates SN74LVC1G32DCKRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

4.5 ns

Propagation Delay (tpd):

8 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.25 mm

Trade Compliance

SN74LVC1G32DCKRG4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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