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NLV18VHC1G132DFT2G

Onsemi

NLV18VHC1G132DFT2G by Onsemi

NLV18VHC1G132DFT2G by Onsemi is a CMOS Logic Gate with 2 inputs, 13.5ns propagation delay at 5V supply voltage. It features Schmitt Trigger, AEC-Q100 screening level, and operates in military temperature grade applications.

Median Price

$0.082

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 219,000 parts In-Stock

1+ parts

-

100+ parts

$0.085

1k+ parts

$0.070

10k+ parts

$0.063

219,000

-

$0.085

$0.070

$0.063

Verical

USA . 219,000 parts In-Stock

1+ parts

-

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10k+ parts

$0.079

219,000

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$0.079

Distributors (In-Stock)

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Digiode

USA . 2,130 parts In-Stock

1+ parts

$0.066

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2,130

$0.066

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Vyrian

USA . 9,405 parts In-Stock

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9,405

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Distributors (Availability)

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Corphita

USA . 2,248 parts In-Stock

1+ parts

$0.062

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2,248

$0.062

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Corohmni

South Africa . 214 parts In-Stock

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$0.069

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214

$0.069

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Component Stockers USA

USA . 280,710 parts In-Stock

1+ parts

$0.070

100+ parts

$0.070

1k+ parts

$0.060

10k+ parts

$0.060

280,710

$0.070

$0.070

$0.060

$0.060

Vigor

Singapore . 803 parts In-Stock

1+ parts

$0.100

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803

$0.100

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AZTECH Wire

Italy . 42 parts In-Stock

1+ parts

$14.720

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42

$14.720

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Continental Prestige Electronics

USA . 219,000 parts In-Stock

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$0.083

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219,000

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$0.083

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TANS Electronics

Latvia . 7,616 parts In-Stock

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Problanco Electronics

Mexico . 5,077 parts In-Stock

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Kulean Microsystems

USA . 1,740 parts In-Stock

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SupplyDigital Components

Austria . 1,548 parts In-Stock

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UHIMA Technologies

Türkiye . 242 parts In-Stock

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Microchip USA

USA . 174 parts In-Stock

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Overview

Unleash the power of precision and reliability with the NLV18VHC1G132DFT2G by Onsemi. As a leader in logic gates, Onsemi delivers top-notch quality and performance for a wide range of applications. With a focus on innovation and excellence, this product offers unparalleled value, benefits, and advantages to customers seeking efficient and effective solutions. Elevate your projects with the NLV18VHC1G132DFT2G and experience the difference that Onsemi can make in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the internal components of the logic gates.

Propagation Delay At Nominal Supply: 13.5 ns

Low propagation delay ensures fast and efficient operation of the logic gates.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and simplifying assembly.

Screening Level: AEC-Q100

AEC-Q100 screening ensures high quality and reliability for automotive applications.

No. of Inputs: 2

Having 2 inputs allows for basic logic operations to be performed efficiently.

Nominal Supply Voltage / Vsup (V): 5

Works with a standard nominal supply voltage of 5V, making it compatible with many electronic systems.

Load Capacitance (CL): 50 pF

The low load capacitance ensures minimal interference with signal transmission.

No. of Terminals: 5

Having 5 terminals provides multiple connection points for easy integration into circuits.

Maximum I (ol): 8 Amp

High maximum output current allows for driving of larger loads.

Propagation Delay (tpd): 20.5 ns

Although slightly higher, the propagation delay is still fast and suitable for most applications.

Maximum Operating Temperature: 125 °C

Operates efficiently at high temperatures, suitable for industrial and automotive environments.

Output Characteristics: 3-STATE

3-STATE output allows for high impedance state, providing flexibility in controlling the output signal.

Minimum Operating Temperature: -55 °C

Operates reliably at low temperatures, suitable for a wide range of operating conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance for the terminals.

Terminal Position: DUAL

Dual terminal position allows for easy connection in various circuit configurations.

Maximum Seated Height: 1.1 mm

Low seated height allows for compact designs and efficient use of space.

Width: 1.25 mm

Narrow width size enables dense packing on circuit boards.

Minimum Supply Voltage (Vsup): 2 V

Can operate at a low minimum supply voltage, making it energy-efficient.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a sufficient duration during assembly.

Peak Reflow Temperature °C: 260

Can withstand high peak reflow temperatures during assembly processes, ensuring reliable soldering.

Length: 2 mm

Compact length size saves space on circuit boards.

Temperature Grade: MILITARY

Military-grade temperature specifications ensure reliability in harsh environments and critical applications.

Schmitt Trigger: YES

Schmitt trigger feature provides hysteresis and noise immunity for stable and reliable operation.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, ideal for a wide range of applications.

Terminal Form: GULL WING

Gull wing terminal form provides mechanical strength and easy assembly onto circuit boards.

Packing Method: TR

TR packing method ensures safe transportation and storage of the logic gates.

Terminal Pitch: 0.65 mm

Narrow terminal pitch allows for compact design and easy integration into circuit layouts.

Maximum Supply Voltage (Vsup): 5.5 V

Can handle a maximum supply voltage of 5.5V, providing a safety margin for overvoltage protection.

Technical Specifications

Logic Gates NLV18VHC1G132DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Propagation Delay At Nominal Supply:

13.5 ns

Propagation Delay (tpd):

20.5 ns

Schmitt Trigger:

YES

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLV18VHC1G132DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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