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NLV17SZU04DFT2G

Onsemi

NLV17SZU04DFT2G by Onsemi

NLV17SZU04DFT2G by Onsemi is a CMOS Logic Gate with 6.6ns Propagation Delay, suitable for industrial applications. Operating at 1.8V to 5.5V, it has a load capacitance of 50pF and can handle up to 24A max I (ol). This surface-mount device in a small outline package is AEC-Q100 compliant, making it ideal for automotive electronics.

Median Price

$0.420

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1,231 parts In-Stock

1+ parts

$0.791

100+ parts

$0.160

1k+ parts

$0.093

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1,231

$0.791

$0.160

$0.093

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EBV Elektronik

Germany . 18,000 parts In-Stock

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Rochester

USA . 6,000 parts In-Stock

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$0.050

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$0.041

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$0.037

6,000

-

$0.050

$0.041

$0.037

Distributors (In-Stock)

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Digiode

USA . 1,975 parts In-Stock

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$0.039

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1,975

$0.039

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Flip Electronics

USA . 250,000 parts In-Stock

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Chip Stock

USA . 78,000 parts In-Stock

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Vyrian

USA . 13,071 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,749 parts In-Stock

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$0.037

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1,749

$0.037

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Corohmni

South Africa . 364 parts In-Stock

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$0.041

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364

$0.041

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Vigor

Singapore . 549 parts In-Stock

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$0.140

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549

$0.140

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AZTECH Wire

Italy . 1,215 parts In-Stock

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$12.830

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Kepictronics

USA . 54,000 parts In-Stock

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Perfect Parts

USA . 8,030 parts In-Stock

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Problanco Electronics

Mexico . 6,530 parts In-Stock

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SupplyDigital Components

Austria . 5,885 parts In-Stock

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TANS Electronics

Latvia . 5,014 parts In-Stock

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RC Electronics

USA . 3,000 parts In-Stock

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GreenTree Electronics

Israel . 1,390 parts In-Stock

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Authorized Procurement Solutions

USA . 1,290 parts In-Stock

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Kulean Microsystems

USA . 797 parts In-Stock

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UHIMA Technologies

Türkiye . 597 parts In-Stock

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Overview

Experience the unmatched quality and reliability of Onsemi with the NLV17SZU04DFT2G Logic Gates. Designed to meet the highest standards, this product offers fast propagation delay and low power consumption, making it ideal for a wide range of industrial applications. With a compact package and AEC-Q100 screening level, this Logic Gate provides exceptional value and performance. Trust Onsemi for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the logic gates.

Propagation Delay At Nominal Supply: 6.6 ns

Low propagation delay ensures fast operation of the logic gates, making them suitable for high-speed applications.

Surface Mount: YES

Allows for easy and efficient integration onto circuit boards, saving space and simplifying the overall design.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a low supply voltage, making it energy-efficient and reducing power consumption.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, ensuring reliable performance in challenging environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the logic gates efficient and reliable.

Technical Specifications

Logic Gates NLV17SZU04DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

6.6 ns

Propagation Delay (tpd):

12.1 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLV17SZU04DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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