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NLV17SZ04DFT2G

Onsemi

NLV17SZ04DFT2G by Onsemi

NLV17SZ04DFT2G by Onsemi is a CMOS Logic Gate with 5.2ns Propagation Delay, suitable for military applications. Operating at 1.8V to 5.5V, it has a load capacitance of 50pF and can handle up to 24A of I (ol). It comes in a small outline package with dual terminals and matte tin finish, ideal for high-temperature environments.

Median Price

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Lifecycle Status

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5

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1k+

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Chip Stock

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Vyrian

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Sensible Micro Corp

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Flip Electronics

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Vigor

Singapore . 500 parts In-Stock

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Microchip USA

USA . 3,287 parts In-Stock

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$0.764

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AZTECH Wire

Italy . 167 parts In-Stock

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$16.370

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RC Electronics

USA . 85,639 parts In-Stock

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Kepictronics

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TANS Electronics

Latvia . 5,376 parts In-Stock

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SupplyDigital Components

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Corphita

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Overview

Enhance your circuit designs with the NLV17SZ04DFT2G by Onsemi, a high-quality logic gate that promises reliability and efficiency. Manufactured by Onsemi, a trusted leader in semiconductor solutions, this compact and versatile component is perfect for a wide range of applications. With a nominal supply voltage of 1.8V and a maximum operating temperature of 125 °C, this logic gate offers exceptional performance under challenging conditions. Upgrade your projects with the NLV17SZ04DFT2G and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Propagation Delay At Nominal Supply: 5.2 ns

Offers fast signal processing, making this product suitable for high-speed applications.

Surface Mount: YES

Allows for easy and convenient installation on PCBs, saving space and reducing assembly time.

Nominal Supply Voltage / Vsup (V): 1.8

Operates efficiently at a low supply voltage, leading to energy savings and reduced heat generation.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for a wide range of environmental conditions.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity, enhancing overall performance.

Technical Specifications

Logic Gates NLV17SZ04DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

5.2 ns

Propagation Delay (tpd):

12 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLV17SZ04DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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