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NLV17SG08DFT2G

Onsemi

NLV17SG08DFT2G by Onsemi

NLV17SG08DFT2G by Onsemi is a CMOS Logic Gate with 2 inputs, 19ns propagation delay, and operates b/w -55 to 125 °C. Ideal for military applications, it features a small outline package with matte tin terminals and AEC-Q101 screening level.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 6,574 parts In-Stock

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Chip Stock

USA . 5,400 parts In-Stock

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Rebound Electronics

UK . 2,995 parts In-Stock

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Digiode

USA . 859 parts In-Stock

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Vigor

Singapore . 535 parts In-Stock

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$0.110

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Microchip USA

USA . 4,963 parts In-Stock

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$0.688

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AZTECH Wire

Italy . 823 parts In-Stock

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GreenTree Electronics

Israel . 36,000 parts In-Stock

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Problanco Electronics

Mexico . 7,274 parts In-Stock

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Kulean Microsystems

USA . 2,072 parts In-Stock

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TANS Electronics

Latvia . 1,025 parts In-Stock

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UHIMA Technologies

Türkiye . 769 parts In-Stock

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SupplyDigital Components

Austria . 608 parts In-Stock

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Corohmni

South Africa . 486 parts In-Stock

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Corphita

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Overview

Experience unparalleled performance and reliability with the NLV17SG08DFT2G by Onsemi, a leading manufacturer in the industry. This logic gate offers seamless integration into various applications, providing exceptional value and benefits to customers. With a wide operating temperature range, high-quality construction, and advanced technology, this product ensures optimal functionality and efficiency. Trust Onsemi for top-notch components that deliver superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the logic gate, ensuring long-term reliability.

Surface Mount: YES

Allows for easy and efficient installation on printed circuit boards, saving time during assembly.

Screening Level: AEC-Q101

Compliance with automotive industry standards ensures high quality and reliability under harsh environmental conditions.

Nominal Supply Voltage / Vsup (V): 3

Operates at a standard voltage level, compatible with most electronic systems.

Propagation Delay (tpd): 19 ns

Fast response time ensures quick signal processing in electronic circuits.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for use in various industrial applications.

Minimum Operating Temperature: -55 °C

Capable of functioning in low temperature environments, making it versatile for different operating conditions.

Technology: CMOS

Complementary Metal-Oxide-Semiconductor technology offers low power consumption and high noise immunity, making it energy-efficient and reliable.

Technical Specifications

Logic Gates NLV17SG08DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

17SG

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Propagation Delay (tpd):

19 ns

Screening Level:

AEC-Q101

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

.9 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLV17SG08DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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