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NLU1G08MUTCG

Onsemi

NLU1G08MUTCG by Onsemi

NLU1G08MUTCG by Onsemi is a CMOS Logic Gate with 2 inputs, 16.5 ns propagation delay at 5V. It operates in temperatures ranging from -55 to 125 °C and is suitable for military-grade applications due to its small outline package and low power consumption.

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Vyrian

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Cyclops Electronics Ltd

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AZTECH Wire

Italy . 787 parts In-Stock

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Component Stockers USA

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Overview

Discover the power of precision with the NLU1G08MUTCG by Onsemi. As a leader in the industry, Onsemi delivers top-quality logic gates that are perfect for a wide range of applications. Whether you're looking to enhance your project with cutting-edge technology or streamline your workflow with reliable components, this product has got you covered. With a focus on efficiency and performance, Onsemi's logic gates offer unparalleled value and benefits to customers. Upgrade your system today and experience the difference with Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and resistant to external damage.

Propagation Delay At Nominal Supply: 16.5 ns

The low propagation delay ensures fast signal processing, making this product suitable for high-speed applications.

Surface Mount: YES

Being surface mountable allows for easy integration onto circuit boards, saving space and simplifying assembly processes.

No. of Inputs: 2

Having 2 inputs provides flexibility in logic operations, allowing for a variety of input combinations.

Package Shape: RECTANGULAR

The rectangular shape is common and compatible with standard board layouts, making integration seamless.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes this product compatible with a wide range of systems.

Load Capacitance (CL): 50 pF

The low load capacitance ensures efficient signal transmission and reduces power consumption.

Power Supplies (V): 1.8/5

Having multiple power supply options allows for flexibility in different operating environments.

No. of Terminals: 6

A higher number of terminals provide multiple connection points, enhancing compatibility with various circuit layouts.

Maximum I (ol): 4 Amp

The high output current capability supports driving power-hungry loads, increasing the product's versatility.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, this product can withstand harsh environmental conditions without performance degradation.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures reliable operation even in extreme cold environments.

Terminal Finish: NICKEL PALLADIUM GOLD

This terminal finish provides excellent conductivity and corrosion resistance, ensuring long-term reliability.

Terminal Position: DUAL

Dual terminal positions offer flexibility in board layout and connection options, accommodating different design requirements.

Maximum Seated Height: 0.55 mm

The low seated height allows for compact designs and reduces the overall profile of the product.

Width: 1 mm

Having a narrow width saves space on the PCB, enabling more components to be integrated within a limited area.

Minimum Supply Voltage (Vsup): 1.65 V

Supporting a low minimum supply voltage enables operation in energy-efficient systems and extends battery life.

Maximum Time At Peak Reflow Temperature (s): 30

The ability to withstand peak reflow temperatures for an extended period simplifies manufacturing processes and ensures product reliability.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, the product can endure the harsh conditions of the soldering process without damage.

Length: 1.2 mm

The compact length facilitates space-saving designs and allows for high-density packaging of components on the PCB.

Temperature Grade: MILITARY

Meeting military-grade standards ensures high reliability, durability, and performance under extreme conditions for mission-critical applications.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and fast switching speeds, making the product energy-efficient and reliable.

Terminal Form: NO LEAD

The absence of lead terminals complies with environmental regulations and reduces the risk of contamination in electronic waste.

Packing Method: TR

The TR (Tape and Reel) packing method simplifies storage, handling, and automated assembly processes, improving overall efficiency.

Terminal Pitch: 0.4 mm

A narrow terminal pitch allows for high-density mounting and supports miniaturization of electronic devices.

Maximum Supply Voltage (Vsup): 5.5 V

The high maximum supply voltage tolerance provides a safety margin and protection against voltage spikes, ensuring the product's robustness.

Technical Specifications

Logic Gates NLU1G08MUTCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

1G

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Length:

1.2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,16

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

16.5 ns

Propagation Delay (tpd):

16.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1 mm

Trade Compliance

NLU1G08MUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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