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SN74HC14QDRQ1

Texas Instruments

SN74HC14QDRQ1 by Texas Instruments

SN74HC14QDRQ1 by Texas Instruments is a CMOS logic gate with 6 functions, 38 ns propagation delay at 5V. AEC-Q100 screened for automotive applications, it operates b/w -40 to 125 °C and has a max power supply current of 0.02 mA.

Median Price

$0.392

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Mouser Electronics

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Rochester

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DigiKey

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Ampacity Inc.

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Component Stockers USA

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Netroflash

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Argo Parts USA

USA . 314 parts In-Stock

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Modulus Dynamics

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Advanced Electronics

New Zealand . 350 parts In-Stock

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Parana Technologies

USA . 363 parts In-Stock

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Lucentia Tech

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Overview

Discover the Texas Instruments SN74HC14QDRQ1, a top-quality logic gates product designed for automotive applications. With a reliable manufacturer like Texas Instruments, you can trust in the durability and performance of this component. Offering fast propagation delay and low power consumption, this logic gate is essential for ensuring smooth operation in automotive systems. Upgrade your projects with the SN74HC14QDRQ1 and experience seamless functionality and improved efficiency.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides a durable and lightweight housing for the logic gates, making them suitable for various applications.

Propagation Delay At Nominal Supply:

38 ns - With a fast propagation delay, these logic gates can quickly process signals, enhancing overall system performance.

Surface Mount:

YES - The surface mount design allows for easy integration onto circuit boards, saving space and simplifying installation.

No. of Functions:

6 - With multiple functions in one package, these logic gates offer versatility and efficiency in circuit design.

Screening Level:

AEC-Q100 - This automotive-grade screening level ensures high reliability and durability for use in automotive applications.

Package Shape:

RECTANGULAR - The rectangular shape of the package allows for easy handling and placement on circuit boards.

Nominal Supply Voltage / Vsup (V):

5 - The 5V supply voltage provides stable power to the logic gates, ensuring consistent performance.

Load Capacitance (CL):

50 pF - The load capacitance of 50 pF helps optimize signal transmission and reduce signal distortion.

Power Supplies (V):

2/6 - Compatible with power supplies ranging from 2V to 6V, offering flexibility in system design.

No. of Terminals:

14 - The 14 terminals provide ample connection points for interfacing with other components in a circuit.

Package Style (Meter):

SMALL OUTLINE - The small outline package style saves space on circuit boards, ideal for compact designs.

Maximum I (ol):

4 Amp - The high maximum output current of 4 Amp allows the logic gates to drive heavy loads without overheating.

Propagation Delay (tpd):

190 ns - The propagation delay of 190 ns ensures quick signal processing, suitable for high-speed applications.

Maximum Operating Temperature:

125 °C - With a high maximum operating temperature, these logic gates can withstand harsh environmental conditions.

Minimum Operating Temperature:

40 °C - The low minimum operating temperature allows for reliable performance in cold environments.

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au) - The terminal finish ensures excellent conductivity and corrosion resistance for long-term durability.

Terminal Position:

DUAL - The dual terminal position provides flexibility in circuit layout and connection options.

Maximum Seated Height:

1.75 mm - The low maximum seated height saves space in compact designs, ideal for applications with limited space.

Width:

3.9 mm - The narrow width of 3.9 mm allows for efficient use of space on circuit boards, enabling dense layouts.

Minimum Supply Voltage (Vsup):

2 V - With a low minimum supply voltage of 2V, these logic gates are energy-efficient and suitable for low-power applications.

Peak Reflow Temperature °C:

260 - The high peak reflow temperature of 260°C ensures secure soldering during assembly and rework processes.

Length:

8.65 mm - The length of 8.65 mm provides a compact footprint for space-constrained applications.

Temperature Grade:

AUTOMOTIVE - This automotive-grade temperature grade ensures reliable performance in demanding automotive environments.

Schmitt Trigger:

YES - The inclusion of a Schmitt trigger allows for noise immunity and signal conditioning, enhancing signal integrity.

Technology:

CMOS - The CMOS technology offers low power consumption and high noise immunity, ideal for battery-operated devices.

Terminal Form:

GULL WING - The gull-wing terminal form facilitates easy soldering and reliable connections during assembly.

Packing Method:

TR - The tape-and-reel packing method enables efficient handling and automated assembly processes.

Terminal Pitch:

1.27 mm - The terminal pitch of 1.27 mm provides adequate spacing for easy soldering and connection to external components.

Maximum Supply Voltage (Vsup):

6 V - With a high maximum supply voltage of 6V, these logic gates are compatible with a wide range of power sources.

Maximum Power Supply Current (ICC):

0.02 mA - The low maximum power supply current of 0.02 mA minimizes power consumption and heat generation.

Technical Specifications

Logic Gates SN74HC14QDRQ1 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

HC/UH

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.02 mA

Propagation Delay At Nominal Supply:

38 ns

Propagation Delay (tpd):

190 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Sub-Category:

Gate

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

SN74HC14QDRQ1 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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