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NL7SZ58MU1TCG

Onsemi

NL7SZ58MU1TCG by Onsemi

NL7SZ58MU1TCG by Onsemi is a CMOS logic IC with 6 terminals, operating b/w -55 to 125 °C. It has a supply voltage range of 1.65V to 5.5V and comes in a small outline package suitable for military-grade applications. This surface-mount IC is ideal for compact electronic devices requiring high reliability in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

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Digiode

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SupplyDigital Components

Austria . 7,728 parts In-Stock

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Kulean Microsystems

USA . 5,895 parts In-Stock

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TANS Electronics

Latvia . 3,693 parts In-Stock

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Problanco Electronics

Mexico . 3,049 parts In-Stock

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UHIMA Technologies

Türkiye . 939 parts In-Stock

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Corphita

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Corohmni

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Overview

Looking for a reliable and high-quality Other Function Logic IC? Look no further than the NL7SZ58MU1TCG by Onsemi. With a reputation for excellence, Onsemi delivers top-notch products that meet the demands of various applications. This innovative IC offers customers unmatched value and benefits, making it the perfect choice for your next project. Trust Onsemi's expertise and choose the NL7SZ58MU1TCG for all your logic IC needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good durability and protection for the internal components of the IC, ensuring long-term reliability.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on PCBs, saving space and facilitating automated assembly processes.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a standard supply voltage of 3.3V, making it compatible with a wide range of systems and applications.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this IC can withstand high-temperature environments without sacrificing performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this IC energy-efficient and reliable.

Technical Specifications

Other Function Logic ICs NL7SZ58MU1TCG attributes and parameters. Explore more Other Function Logic ICs devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-N6

Length:

1.45 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Packing Method:

TR

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NL7SZ58MU1TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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