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NL17SZ05P5T5G-L22088

Onsemi

NL17SZ05P5T5G-L22088 by Onsemi

NL17SZ05P5T5G-L22088 by Onsemi is a Logic Gate with 2.5V supply voltage, 50pF load capacitance, and 12ns propagation delay. Ideal for applications requiring OPEN-DRAIN output characteristics in small outline packages with dual terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,951 parts In-Stock

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Digiode

USA . 835 parts In-Stock

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AZTECH Wire

Italy . 696 parts In-Stock

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$17.400

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Kulean Microsystems

USA . 7,204 parts In-Stock

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TANS Electronics

Latvia . 3,306 parts In-Stock

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Problanco Electronics

Mexico . 3,253 parts In-Stock

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SupplyDigital Components

Austria . 2,571 parts In-Stock

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Corphita

USA . 1,121 parts In-Stock

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UHIMA Technologies

Türkiye . 984 parts In-Stock

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Corohmni

South Africa . 489 parts In-Stock

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Microchip USA

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Overview

Enhance your electronic projects with the NL17SZ05P5T5G-L22088 by Onsemi, a top-quality Logic Gates component designed to meet your needs. Manufactured by Onsemi, a trusted name in the industry, this product offers unparalleled reliability and performance. Ideal for a wide range of applications, this Logic Gates package boasts a small outline, very thin profile design, making it versatile and easy to integrate into your projects. With a nominal supply voltage of 2.5V, maximum power supply current of 100mA, and a propagation delay of only 12ns, this product delivers exceptional value and efficiency to customers. Upgrade your projects today with the NL17SZ05P5T5G-L22088 by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of PLASTIC/EPOXY material makes the product durable and lightweight.

Surface Mount: YES

Easy to mount on circuit boards, saving space and simplifying assembly.

Nominal Supply Voltage / Vsup (V): 2.5

Operates efficiently at a moderate voltage, suitable for a wide range of applications.

Propagation Delay (tpd): 12 ns

Fast propagation delay ensures quick response and high-speed operation.

Output Characteristics: OPEN-DRAIN

Open-drain output allows for flexible circuit design and compatibility with different devices.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity.

Technical Specifications

Logic Gates NL17SZ05P5T5G-L22088 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

17SZ

JESD-30 Code:

R-PDSO-F5

Length:

1 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

FL5/6,.03,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Maximum Power Supply Current (ICC):

100 mA

Propagation Delay (tpd):

12 ns

Schmitt Trigger:

NO

Maximum Seated Height:

.4 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Width:

.8 mm

Trade Compliance

NL17SZ05P5T5G-L22088 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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