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NCV7705DQAR2G

Onsemi

NCV7705DQAR2G by Onsemi

NCV7705DQAR2G by Onsemi is a peripheral driver with built-in protections for over current, over voltage, thermal, and under voltage. It operates at a supply voltage range of 4.5V to 5.25V and has a max operating temperature of 150 °C. Ideal for automotive applications requiring a half bridge based peripheral driver with small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,835 parts In-Stock

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Digiode

USA . 1,094 parts In-Stock

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Vigor

Singapore . 566 parts In-Stock

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$6.200

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566

$6.200

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AZTECH Wire

Italy . 321 parts In-Stock

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$12.780

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321

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TANS Electronics

Latvia . 7,270 parts In-Stock

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SupplyDigital Components

Austria . 6,947 parts In-Stock

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Kulean Microsystems

USA . 4,768 parts In-Stock

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Microchip USA

USA . 2,446 parts In-Stock

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Corphita

USA . 1,832 parts In-Stock

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Problanco Electronics

Mexico . 1,491 parts In-Stock

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UHIMA Technologies

Türkiye . 735 parts In-Stock

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Corohmni

South Africa . 70 parts In-Stock

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Overview

Upgrade your automotive applications with the NCV7705DQAR2G by Onsemi. This high-quality peripheral driver offers built-in protections against over current, over voltage, thermal issues, and more. With a wide operating temperature range and small outline package style, this product ensures reliable performance in harsh conditions. Trust Onsemi's expertise in automotive electronics to deliver superior value and benefits to your projects. Experience enhanced efficiency and reliability with the NCV7705DQAR2G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components of the driver, ensuring long-term reliability.

Maximum Supply Voltage: 5.25 V

Allows for a wide range of input voltages, making it versatile for different applications.

Built-in Protections: OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE

Ensures the safety of the connected devices by preventing damage from various electrical faults.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ideal for automotive or industrial environments.

Nominal Supply Voltage: 5 V

Stable supply voltage for consistent performance of the peripheral driver.

Turn-on Time: 48 us

Fast response time allows for quick activation of connected peripherals.

Technical Specifications

Peripheral Drivers NCV7705DQAR2G attributes and parameters. Explore more Peripheral Drivers devices from Onsemi

Specs

Built-in Protections:

OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE

JESD-30 Code:

R-PDSO-G36

JESD-609 Code:

e4

Length:

10.3 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

36

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP36,.4,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, SHRINK PITCH

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

2.65 mm

Maximum Supply Current:

8 mA

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

48 us

Turn-on Time:

48 us

Width:

7.5 mm

Trade Compliance

NCV7705DQAR2G Interface ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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