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NCV7510DWR2G

Onsemi

NCV7510DWR2G by Onsemi

NCV7510DWR2G by Onsemi is a PWM-based peripheral driver with 20 terminals and built-in protections against over current and over voltage. Operating at temperatures from -40 to 125 °C, it has a supply voltage range of 4.75V to 5.25V, making it ideal for automotive applications requiring precise current control in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,411 parts In-Stock

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Digiode

USA . 1,573 parts In-Stock

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Advanced Electronics

New Zealand . 93 parts In-Stock

1+ parts

$15.496

100+ parts

$14.101

1k+ parts

$12.707

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93

$15.496

$14.101

$12.707

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AZTECH Wire

Italy . 1,205 parts In-Stock

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$17.960

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Kulean Microsystems

USA . 7,698 parts In-Stock

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TANS Electronics

Latvia . 7,288 parts In-Stock

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Problanco Electronics

Mexico . 6,960 parts In-Stock

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SupplyDigital Components

Austria . 3,802 parts In-Stock

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Corphita

USA . 1,405 parts In-Stock

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Vigor

Singapore . 959 parts In-Stock

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UHIMA Technologies

Türkiye . 833 parts In-Stock

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Microchip USA

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Corohmni

South Africa . 280 parts In-Stock

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Overview

Enhance your automotive electronic designs with the NCV7510DWR2G by Onsemi, a top-quality PWM based peripheral driver that offers built-in protections against over current and over voltage. With a small outline package style and dual terminal position, this versatile component is ideal for a wide range of applications in the automotive industry. Trust Onsemi's reputation for reliability and innovation to deliver superior performance and efficiency, making the NCV7510DWR2G a valuable investment for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the peripheral driver, ensuring longevity and reliability.

Surface Mount: YES

Allows for easy and efficient mounting on PCBs, saving space and simplifying the assembly process.

Maximum Supply Voltage: 5.25 V

Can handle a relatively high supply voltage, providing flexibility in terms of power requirements.

Built-in Protections: OVER CURRENT; OVER VOLTAGE

Offers protection against potential damage from overcurrent and overvoltage situations, enhancing the safety and durability of the device.

Maximum Operating Temperature: 125 °C

Can operate in high temperature environments, making it suitable for automotive applications where temperature fluctuations are common.

Technical Specifications

Peripheral Drivers NCV7510DWR2G attributes and parameters. Explore more Peripheral Drivers devices from Onsemi

Specs

Built-in Protections:

OVER CURRENT; OVER VOLTAGE

Interface IC Type:

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e3

Length:

12.8 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SINK

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP20,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

2.65 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

7.5 mm

Trade Compliance

NCV7510DWR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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