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NCV7513FTR2G

Onsemi

NCV7513FTR2G by Onsemi

NCV7513FTR2G by Onsemi is a 32-terminal peripheral driver with built-in transient protection. It operates b/w -40 to 125 °C and supports a supply voltage range of 3-5.5 V, making it ideal for automotive applications requiring fast turn-on/off times and source current flow direction.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 12,221 parts In-Stock

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Digiode

USA . 1,668 parts In-Stock

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AZTECH Wire

Italy . 1,013 parts In-Stock

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RC Electronics

USA . 88,979 parts In-Stock

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SupplyDigital Components

Austria . 6,961 parts In-Stock

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Kepictronics

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TANS Electronics

Latvia . 3,172 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 1,856 parts In-Stock

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UHIMA Technologies

Türkiye . 459 parts In-Stock

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Microchip USA

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Perfect Parts

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Kulean Microsystems

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Vigor

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Overview

Enhance your automotive electronic systems with the NCV7513FTR2G by Onsemi, a reliable peripheral driver that offers exceptional quality and performance. Manufactured by Onsemi, a trusted name in the industry, this product is designed to meet the rigorous standards of AEC-Q100 screening level for automotive applications. With built-in transient protection and a wide operating temperature range, this product ensures long-term reliability and durability. Improve your system's efficiency and functionality with the NCV7513FTR2G, providing customers with unmatched value and peace of mind. Elevate your projects with this superior peripheral driver from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, ideal for automotive applications where weight and durability are important.

Maximum Supply Voltage: 3.6 V

The high maximum supply voltage of 3.6V allows for compatibility with a wide range of automotive electronics systems.

Built-in Protections: TRANSIENT

The built-in transient protections ensure the peripheral driver can handle sudden voltage spikes or power surges, increasing reliability and robustness in automotive environments.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this peripheral driver can withstand the heat generated in automotive applications without compromising performance.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and corrosion resistance, ensuring reliable connections in automotive environments.

Technical Specifications

Peripheral Drivers NCV7513FTR2G attributes and parameters. Explore more Peripheral Drivers devices from Onsemi

Specs

Built-in Protections:

TRANSIENT

JESD-30 Code:

S-PQFP-G32

JESD-609 Code:

e3

Length:

7 mm

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SOURCE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP32,.35SQ,32

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.6 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage-1:

5.5 V

Minimum Supply Voltage-1:

4.5 V

Nominal Supply Voltage-1:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Turn-off Time:

1 us

Turn-on Time:

1 us

Width:

7 mm

Trade Compliance

NCV7513FTR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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