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NCV7512FTR2G

Onsemi

NCV7512FTR2G by Onsemi

NCV7512FTR2G by Onsemi is a Peripheral Driver with 32 terminals, operating voltage range of 3V to 5.5V, and AEC-Q100 screening for automotive applications. It offers built-in transient protection, turn-on/off time of 1us, and sink output current flow direction. Ideal for automotive systems requiring buffer or inverter-based interface ICs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 10,736 parts In-Stock

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Digiode

USA . 1,600 parts In-Stock

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1,600

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Distributors (Availability)

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AZTECH Wire

Italy . 684 parts In-Stock

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$19.060

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684

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Component Stockers USA

USA . 490 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 16,350 parts In-Stock

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16,350

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Kulean Microsystems

USA . 5,525 parts In-Stock

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5,525

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SupplyDigital Components

Austria . 5,209 parts In-Stock

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TANS Electronics

Latvia . 4,429 parts In-Stock

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4,429

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Problanco Electronics

Mexico . 2,295 parts In-Stock

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Vigor

Singapore . 692 parts In-Stock

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Corphita

USA . 685 parts In-Stock

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685

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UHIMA Technologies

Türkiye . 636 parts In-Stock

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636

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Microchip USA

USA . 312 parts In-Stock

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Corohmni

South Africa . 194 parts In-Stock

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Overview

Enhance your automotive electronics with the reliable NCV7512FTR2G by Onsemi. Designed with quality and precision in mind, this peripheral driver offers built-in transient protections and a wide operating temperature range, making it ideal for various automotive applications. With its low profile package style and durable plastic/epoxy body material, this product guarantees reliability and longevity. Trust Onsemi's reputation for excellence and choose the NCV7512FTR2G for all your automotive electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection for the internal components, making this product suitable for various environmental conditions.

Maximum Supply Voltage: 3.6 V

With a maximum supply voltage of 3.6V, this peripheral driver can handle higher voltage inputs, providing flexibility in the design and usage of the product.

Built-in Protections: TRANSIENT

The built-in transient protection feature safeguards the peripheral driver and connected devices from sudden voltage spikes or surges, enhancing the reliability and longevity of the product.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C ensures that this peripheral driver can perform effectively in elevated temperature environments, making it suitable for automotive applications.

Nominal Supply Voltage: 3.3 V

The nominal supply voltage of 3.3V provides a stable power source for the peripheral driver, ensuring consistent performance and operation within specified voltage limits.

Technical Specifications

Peripheral Drivers NCV7512FTR2G attributes and parameters. Explore more Peripheral Drivers devices from Onsemi

Specs

Built-in Protections:

TRANSIENT

JESD-30 Code:

S-PQFP-G32

JESD-609 Code:

e3

Length:

7 mm

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SINK

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP32,.35SQ,32

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.6 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage-1:

5.5 V

Minimum Supply Voltage-1:

4.5 V

Nominal Supply Voltage-1:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Turn-off Time:

1 us

Turn-on Time:

1 us

Width:

7 mm

Trade Compliance

NCV7512FTR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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