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NB3V8312CFAR2G

Onsemi

NB3V8312CFAR2G by Onsemi

NB3V8312CFAR2G clock driver by Onsemi features 32 terminals, 1.8V nominal voltage, and 4.2ns propagation delay. Ideal for industrial applications requiring a clock buffer with 12 true outputs, operating b/w -40 to 85 °C temperature range at up to 250MHz frequency.

Median Price

$10.160

Lifecycle Status

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5

In-Stock Inventory

1k+

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Flip Electronics (Authorized)

USA . 3,142 parts In-Stock

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Digiode

USA . 1,713 parts In-Stock

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$9.899

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Vyrian

USA . 2,373 parts In-Stock

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$10.420

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Flip Electronics

USA . 3,142 parts In-Stock

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Component Sense

UK . 271 parts In-Stock

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Corphita

USA . 1,804 parts In-Stock

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$9.378

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Corohmni

South Africa . 376 parts In-Stock

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Microchip USA

USA . 4,950 parts In-Stock

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$16.730

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Advanced Electronics

New Zealand . 97 parts In-Stock

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$33.018

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$30.046

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$27.075

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Perfect Parts

USA . 11,122 parts In-Stock

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SupplyDigital Components

Austria . 7,665 parts In-Stock

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Problanco Electronics

Mexico . 6,758 parts In-Stock

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Kulean Microsystems

USA . 3,674 parts In-Stock

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TANS Electronics

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UHIMA Technologies

Türkiye . 545 parts In-Stock

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Overview

Unlock the power of precision and reliability with the NB3V8312CFAR2G clock driver by Onsemi. Crafted with top-quality materials and expert engineering, this product ensures seamless performance in a wide range of applications. With fast propagation delay and 3-state output characteristics, this clock driver guarantees optimal functionality. Trust in the superior design and innovative technology of Onsemi to elevate your projects to new heights of efficiency and effectiveness. Say goodbye to downtime and hello to unparalleled performance with the NB3V8312CFAR2G clock driver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body makes the product lightweight and durable, ensuring long-lasting performance.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 1.8

The 1.8V nominal supply voltage provides compatibility with a wide range of systems, making it versatile for various applications.

Propagation Delay (tpd): 4.2 ns

With a low propagation delay of 4.2 ns, this clock driver ensures fast and efficient signal transmission within the circuit.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C makes this product suitable for industrial environments where temperature fluctuations are common.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C ensures reliable performance even in extreme cold conditions.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides corrosion resistance and enhances the product's lifespan, contributing to its reliability.

No. of True Outputs: 12

Having 12 true outputs allows for multiple signals to be generated simultaneously, increasing the product's versatility in complex circuit designs.

Moisture Sensitivity Level (MSL): 2

With a moisture sensitivity level of 2, the product is less susceptible to moisture-related damage, ensuring reliability in humid conditions.

Technical Specifications

Clock Drivers & Buffers NB3V8312CFAR2G attributes and parameters. Explore more Clock Drivers & Buffers devices from Onsemi

Specs

Additional Features:

ALSO OPERATES AT 2.5V, 3.3V SUPPLY VOLTAGE

Family:

NB3V

Input Conditioning:

STANDARD

JESD-30 Code:

S-PQFP-G32

JESD-609 Code:

e3

Length:

7 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Inverted Outputs:

0

No. of Terminals:

32

No. of True Outputs:

12

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE WITH SERIES RESISTOR

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Peak Reflow Temperature (C):

260

Propagation Delay (tpd):

4.2 ns

Maximum Same Edge Skew (tskwd):

.15 ns

Maximum Seated Height:

1.6 mm

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.6 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7 mm

Minimum fmax:

250 MHz

Trade Compliance

NB3V8312CFAR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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