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N01S830HAT22E

Onsemi

N01S830HAT22E by Onsemi

N01S830HAT22E by Onsemi is a 128KX8 SRAM with CMOS technology. It operates synchronously at temperatures ranging from -40 to 125 °C, making it suitable for automotive applications. This small outline memory IC has a memory density of 1048576 bit and supports serial communication with a supply voltage range of 2.5V to 5.5V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,839 parts In-Stock

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Vyrian

USA . 617 parts In-Stock

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617

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TANS Electronics

Latvia . 5,330 parts In-Stock

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Problanco Electronics

Mexico . 5,194 parts In-Stock

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Kulean Microsystems

USA . 1,408 parts In-Stock

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UHIMA Technologies

Türkiye . 937 parts In-Stock

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SupplyDigital Components

Austria . 711 parts In-Stock

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Corphita

USA . 697 parts In-Stock

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Corohmni

South Africa . 299 parts In-Stock

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Overview

Enhance your electronic devices with the N01S830HAT22E by Onsemi, a top-tier SRAM memory chip that offers unparalleled quality and reliability. Manufactured by industry leader Onsemi, this chip is designed for synchronous operation in a small outline package, making it ideal for various applications. With a wide operating temperature range and automotive-grade technology, this memory chip guarantees superior performance and longevity. Upgrade your products with the N01S830HAT22E and experience enhanced speed, efficiency, and reliability like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for applications where weight and reliability are important factors.

Surface Mount: YES

Being surface mountable, this product can be easily integrated into modern PCB designs, saving space and improving overall system efficiency.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing for data transfers, making this SRAM suitable for high-performance applications requiring synchronized data handling.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this SRAM can withstand harsh environmental conditions, making it reliable for a wide range of applications.

Technology: CMOS

The CMOS technology used in this SRAM offers low power consumption and high noise immunity, making it energy-efficient and reliable in various operating conditions.

Memory Width: 8

With a memory width of 8 bits, this SRAM can efficiently handle data processing tasks, making it suitable for applications requiring moderate data storage and retrieval capabilities.

Technical Specifications

SRAM N01S830HAT22E attributes and parameters. Explore more SRAM devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.4 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

N01S830HAT22E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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