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N01S830HAT22IT

Onsemi

N01S830HAT22IT by Onsemi

N01S830HAT22IT by Onsemi is a 128Kx8 SRAM with 1048576 bit memory density. Operating in synchronous mode, it has a small outline package style and operates b/w -40 to 85 °C. Ideal for industrial applications requiring reliable memory storage with a supply voltage range of 2.5V to 5.5V.

Median Price

$5.260

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,971 parts In-Stock

1+ parts

$5.260

100+ parts

$4.536

1k+ parts

$4.175

10k+ parts

$3.207

2,971

$5.260

$4.536

$4.175

$3.207

Mouser Electronics

USA . 2,810 parts In-Stock

1+ parts

$5.260

100+ parts

$4.540

1k+ parts

$3.730

10k+ parts

$3.200

2,810

$5.260

$4.540

$3.730

$3.200

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,187 parts In-Stock

1+ parts

$4.503

100+ parts

-

1k+ parts

-

10k+ parts

-

1,187

$4.503

-

-

-

Vyrian

USA . 522 parts In-Stock

1+ parts

$4.740

100+ parts

-

1k+ parts

-

10k+ parts

-

522

$4.740

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,196 parts In-Stock

1+ parts

$4.266

100+ parts

-

1k+ parts

-

10k+ parts

-

1,196

$4.266

-

-

-

Component Stockers USA

USA . 2,727 parts In-Stock

1+ parts

$4.570

100+ parts

$3.620

1k+ parts

$3.300

10k+ parts

-

2,727

$4.570

$3.620

$3.300

-

Corohmni

South Africa . 460 parts In-Stock

1+ parts

$4.740

100+ parts

-

1k+ parts

-

10k+ parts

-

460

$4.740

-

-

-

TANS Electronics

Latvia . 4,705 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,705

-

-

-

-

Microchip USA

USA . 4,586 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,586

-

-

-

-

SupplyDigital Components

Austria . 1,316 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,316

-

-

-

-

Kulean Microsystems

USA . 735 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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735

-

-

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Problanco Electronics

Mexico . 429 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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429

-

-

-

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UHIMA Technologies

Türkiye . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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100

-

-

-

-

Overview

Elevate your devices with the N01S830HAT22IT by Onsemi, a top-of-the-line SRAM that boasts unparalleled quality and reliability. Manufactured by Onsemi, a trusted name in the industry, this product offers exceptional performance and durability. Ideal for various applications, this SRAM is perfect for those looking to enhance the functionality of their electronics. Experience seamless operation and improved efficiency with this cutting-edge technology. Upgrade your devices today with the N01S830HAT22IT by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package material provides durability and protection for the SRAM, making it a reliable choice for various applications.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination within the SRAM, ensuring efficient data transfer and processing.

Organization: 128KX8

With an organization of 128KX8, this SRAM provides a large capacity for storing data efficiently, making it suitable for high-performance applications.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation, making this SRAM a cost-effective and energy-efficient choice for electronic devices.

Memory Width: 8

An 8-bit memory width allows for quick access and retrieval of data, enhancing the overall performance of the SRAM in computing and data storage applications.

Maximum Supply Voltage (Vsup): 5.5 V

A maximum supply voltage of 5.5V provides flexibility and compatibility with a wide range of systems and devices, making this SRAM versatile and adaptable.

Technical Specifications

SRAM N01S830HAT22IT attributes and parameters. Explore more SRAM devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.4 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

N01S830HAT22IT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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