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N01S830BAT22I

Onsemi

N01S830BAT22I by Onsemi

N01S830BAT22I by Onsemi is a 128KX8 SRAM with 20 MHz clock frequency, operating at -40 to 85 °C. It features a small outline package and thin profile, suitable for industrial applications requiring fast synchronous memory access. With 1048576-bit density and common I/O type, it is ideal for high-speed data processing in various electronic devices.

Median Price

$4.460

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 100 parts In-Stock

1+ parts

$3.440

100+ parts

$3.230

1k+ parts

$2.920

10k+ parts

-

100

$3.440

$3.230

$2.920

-

Mouser Electronics

USA . 339 parts In-Stock

1+ parts

$4.460

100+ parts

$4.150

1k+ parts

$3.540

10k+ parts

$3.530

339

$4.460

$4.150

$3.540

$3.530

DigiKey

USA . 19 parts In-Stock

1+ parts

$4.460

100+ parts

$3.847

1k+ parts

$3.540

10k+ parts

-

19

$4.460

$3.847

$3.540

-

Flip Electronics (Authorized)

USA . 400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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400

-

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 516 parts In-Stock

1+ parts

$3.268

100+ parts

-

1k+ parts

-

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516

$3.268

-

-

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Vyrian

USA . 445 parts In-Stock

1+ parts

$3.440

100+ parts

-

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-

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445

$3.440

-

-

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Flip Electronics

USA . 400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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400

-

-

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ACDS - Activité Composants Distribution Service

France . 200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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200

-

-

-

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Bristol Electronics

USA . 200 parts In-Stock

1+ parts

-

100+ parts

$2.325

1k+ parts

$2.159

10k+ parts

-

200

-

$2.325

$2.159

-

Dan-Mar Components

USA . 200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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200

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 139 parts In-Stock

1+ parts

$2.920

100+ parts

-

1k+ parts

-

10k+ parts

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139

$2.920

-

-

-

Corphita

USA . 1,308 parts In-Stock

1+ parts

$3.096

100+ parts

-

1k+ parts

-

10k+ parts

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1,308

$3.096

-

-

-

Component Stockers USA

USA . 1,882 parts In-Stock

1+ parts

$3.440

100+ parts

$2.870

1k+ parts

$3.320

10k+ parts

-

1,882

$3.440

$2.870

$3.320

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Corohmni

South Africa . 134 parts In-Stock

1+ parts

$3.440

100+ parts

-

1k+ parts

-

10k+ parts

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134

$3.440

-

-

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Continental Prestige Electronics

USA . 29 parts In-Stock

1+ parts

$4.680

100+ parts

$3.110

1k+ parts

-

10k+ parts

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29

$4.680

$3.110

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Microchip USA

USA . 1,222 parts In-Stock

1+ parts

$14.588

100+ parts

-

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1,222

$14.588

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Lixinc

USA . 16,476 parts In-Stock

1+ parts

-

100+ parts

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16,476

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TANS Electronics

Latvia . 4,318 parts In-Stock

1+ parts

-

100+ parts

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4,318

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-

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Kulean Microsystems

USA . 3,391 parts In-Stock

1+ parts

-

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3,391

-

-

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SupplyDigital Components

Austria . 2,720 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,720

-

-

-

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Problanco Electronics

Mexico . 2,720 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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2,720

-

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Perfect Parts

USA . 250 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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250

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UHIMA Technologies

Türkiye . 236 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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236

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-

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Overview

Elevate your electronics with the N01S830BAT22I by Onsemi, a top-quality SRAM memory chip that boasts exceptional performance and reliability. Manufactured by Onsemi, a trusted industry leader, this small outline, thin profile chip offers 128Kx8 organization and 3-state output characteristics for seamless data processing. Ideal for industrial applications, this synchronous SRAM operates at a maximum temperature of 85°C, delivering superior functionality even in challenging environments. Upgrade your devices with Onsemi's N01S830BAT22I and experience enhanced speed, efficiency, and durability like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability, making this SRAM a good choice for long-term use.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation in a variety of electronic devices.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this SRAM can withstand harsh environmental conditions without degrading performance.

Technology: CMOS

Utilizing CMOS technology provides low power consumption and high speed operation, making this SRAM energy-efficient and fast.

Memory IC Type: STANDARD SRAM

The use of standard SRAM technology ensures compatibility and reliability in various applications, making this product a versatile choice.

Technical Specifications

SRAM N01S830BAT22I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

20 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.4 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.1 mm

Maximum Standby Current:

.000001 Amp

Minimum Standby Voltage:

2.5 V

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

N01S830BAT22I Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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