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N01S830HAT22I

Onsemi

N01S830HAT22I by Onsemi

N01S830HAT22I by Onsemi is a small outline, thin profile SRAM with 128Kx8 organization. Operating in synchronous mode, it has a memory density of 1048576 bits and operates b/w -40 to 85°C. Ideal for industrial applications requiring reliable CMOS technology with serial interface and low supply voltage of 2.5V.

Median Price

$4.460

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,593 parts In-Stock

1+ parts

$4.460

100+ parts

$4.010

1k+ parts

$3.660

10k+ parts

$3.590

2,593

$4.460

$4.010

$3.660

$3.590

DigiKey

USA . 923 parts In-Stock

1+ parts

$4.460

100+ parts

$3.847

1k+ parts

$3.540

10k+ parts

-

923

$4.460

$3.847

$3.540

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,979 parts In-Stock

1+ parts

$4.712

100+ parts

-

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1,979

$4.712

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Vyrian

USA . 2,459 parts In-Stock

1+ parts

$4.960

100+ parts

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2,459

$4.960

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Lantek

USA . 36 parts In-Stock

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36

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 615 parts In-Stock

1+ parts

$4.464

100+ parts

-

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10k+ parts

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615

$4.464

-

-

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Continental Prestige Electronics

USA . 96 parts In-Stock

1+ parts

$4.790

100+ parts

$3.200

1k+ parts

-

10k+ parts

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96

$4.790

$3.200

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Corohmni

South Africa . 197 parts In-Stock

1+ parts

$4.960

100+ parts

-

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197

$4.960

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Lixinc

USA . 15,914 parts In-Stock

1+ parts

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15,914

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

1+ parts

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15,000

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TANS Electronics

Latvia . 8,381 parts In-Stock

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8,381

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Microchip USA

USA . 7,275 parts In-Stock

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7,275

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Problanco Electronics

Mexico . 7,037 parts In-Stock

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7,037

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Kulean Microsystems

USA . 5,771 parts In-Stock

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5,771

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SupplyDigital Components

Austria . 3,735 parts In-Stock

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3,735

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Kepictronics

USA . 3,412 parts In-Stock

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3,412

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Perfect Parts

USA . 2,062 parts In-Stock

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2,062

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UHIMA Technologies

Türkiye . 838 parts In-Stock

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838

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Discover the N01S830HAT22I by Onsemi, a high-quality SRAM that offers unparalleled reliability and performance. Manufactured by Onsemi, a trusted leader in semiconductor technology, this product is perfect for a wide range of applications. With a focus on value and customer satisfaction, this SRAM provides numerous benefits such as fast data transfer speeds and low power consumption. Experience the advantages of this innovative product today and take your projects to the next level with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and reliability for the product.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort.

Organization: 128KX8

Offers a high level of organization for efficient data storage and retrieval.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for reliable operation in various environments.

Memory IC Type: STANDARD SRAM

Standard SRAM ensures compatibility and ease of integration with existing systems.

Technical Specifications

SRAM N01S830HAT22I attributes and parameters. Explore more SRAM devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.4 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

N01S830HAT22I Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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