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MURHS160T3G

Onsemi

MURHS160T3G by Onsemi

MURHS160T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 1.7V and output current of 1A. It operates b/w -65 to 175°C, has a reverse recovery time of 0.035us, and can handle up to 600V peak reverse voltage. Ideal for applications requiring fast switching and low power loss in compact designs.

Median Price

$0.347

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,000 parts In-Stock

1+ parts

$0.248

100+ parts

$0.207

1k+ parts

$0.195

10k+ parts

-

2,000

$0.248

$0.207

$0.195

-

Mouser Electronics

USA . 13,149 parts In-Stock

1+ parts

$0.820

100+ parts

$0.493

1k+ parts

$0.454

10k+ parts

$0.305

13,149

$0.820

$0.493

$0.454

$0.305

Newark

USA . 80 parts In-Stock

1+ parts

$0.937

100+ parts

$0.438

1k+ parts

-

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80

$0.937

$0.438

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DigiKey

USA . 7,500 parts In-Stock

1+ parts

-

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10k+ parts

$0.230

7,500

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$0.230

Flip Electronics (Authorized)

USA . 7,500 parts In-Stock

1+ parts

-

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7,500

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Chip1Stop

Japan . 2,500 parts In-Stock

1+ parts

-

100+ parts

$0.347

1k+ parts

$0.339

10k+ parts

-

2,500

-

$0.347

$0.339

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Verical

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.207

1k+ parts

$0.195

10k+ parts

-

2,000

-

$0.207

$0.195

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Rochester

USA . 465 parts In-Stock

1+ parts

-

100+ parts

$0.421

1k+ parts

$0.349

10k+ parts

$0.312

465

-

$0.421

$0.349

$0.312

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 433 parts In-Stock

1+ parts

$0.050

100+ parts

-

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433

$0.050

-

-

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Vyrian

USA . 970 parts In-Stock

1+ parts

$0.053

100+ parts

-

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970

$0.053

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Nova Conductors

Japan . 53 parts In-Stock

1+ parts

$0.199

100+ parts

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53

$0.199

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Flip Electronics

USA . 7,500 parts In-Stock

1+ parts

-

100+ parts

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7,500

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-

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Manoshevitz Elec. Sales

Israel . 5,800 parts In-Stock

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5,800

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Distributors (Availability)

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Corphita

USA . 2,158 parts In-Stock

1+ parts

$0.048

100+ parts

-

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2,158

$0.048

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Corohmni

South Africa . 64 parts In-Stock

1+ parts

$0.053

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64

$0.053

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Ampacity Inc.

Singapore . 4,246 parts In-Stock

1+ parts

$0.196

100+ parts

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4,246

$0.196

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Andel Nordic

Denmark . 4,000 parts In-Stock

1+ parts

$0.368

100+ parts

-

1k+ parts

$0.353

10k+ parts

$0.353

4,000

$0.368

-

$0.353

$0.353

Perfect Parts

USA . 17,492 parts In-Stock

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17,492

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Kepictronics

USA . 8,000 parts In-Stock

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8,000

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TANS Electronics

Latvia . 6,779 parts In-Stock

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6,779

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SupplyDigital Components

Austria . 6,554 parts In-Stock

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6,554

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Kulean Microsystems

USA . 5,090 parts In-Stock

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5,090

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Problanco Electronics

Mexico . 3,592 parts In-Stock

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3,592

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GreenTree Electronics

Israel . 1,360 parts In-Stock

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1,360

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Netroflash

USA . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 404 parts In-Stock

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404

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Overview

Upgrade your electronic devices with the MURHS160T3G by Onsemi, a high-quality rectifier diode that guarantees top-notch performance and reliability. Manufactured by Onsemi, a trusted industry leader, this diode offers unparalleled value and benefits to customers. With a maximum forward voltage of 1.7V and a maximum output current of 1A, this Schottky diode is perfect for a wide range of applications in electronics, ensuring efficient power conversion and protection. Trust Onsemi's expertise and choose the MURHS160T3G for all your diode needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the diode lightweight and durable, ideal for various applications.

Maximum Reverse Recovery Time: 0.035 us

The fast reverse recovery time ensures efficient operation and minimal power loss in high-speed switching applications.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising performance.

Diode Type: RECTIFIER DIODE

A rectifier diode is designed for converting alternating current (AC) to direct current (DC), making this diode suitable for power supply applications.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speed compared to conventional diodes, enhancing efficiency and performance.

Maximum Repetitive Peak Reverse Voltage: 600 V

The high peak reverse voltage rating allows this diode to handle higher voltage levels, making it suitable for power electronics applications.

Technical Specifications

Diodes & Rectifiers MURHS160T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

15 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURHS160T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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