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MURHF860CT

Onsemi

MURHF860CT by Onsemi

MURHF860CT by Onsemi is a common cathode diode with ultra-fast recovery power, featuring a max reverse recovery time of 0.035 us and a max forward voltage of 2.8V. Ideal for applications requiring high-speed rectification in electronic circuits, this diode has a max output current of 4A and can handle up to 600V peak repetitive reverse voltage.

Median Price

$0.909

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Freelance Electronics

USA . 38 parts In-Stock

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$0.909

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$0.955

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$0.900

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Vyrian

USA . 2,476 parts In-Stock

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Digiode

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Electronic Expediters

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Sea View Technologies

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Bristol Electronics

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Corohmni

South Africa . 347 parts In-Stock

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Component Stockers USA

USA . 734 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kepictronics

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TANS Electronics

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Problanco Electronics

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Corphita

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Overview

Discover the superior performance and reliability of the MURHF860CT diode by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality products like the MURHF860CT, designed for ultra-fast recovery power applications. With its common cathode configuration and high peak repetitive reverse voltage, this diode offers unmatched efficiency and durability. Maximize your power systems with the MURHF860CT and experience the benefits of exceptional quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the diodes, making them suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient and reliable operation in circuit designs.

Maximum Reverse Recovery Time: 0.035 us

Ultra-fast reverse recovery time of 0.035 us ensures quick switching and minimal power losses in the diodes.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and space-saving installation in electronic devices.

No. of Terminals: 3

3 terminals provide stable connections and support for the diode's functionality in the circuit.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers secure mounting and heat dissipation for optimal performance.

Application: ULTRA FAST RECOVERY POWER

Designed for ultra-fast recovery power applications, ensuring efficient and reliable power conversion.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, these diodes can operate reliably in high-temperature environments.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good conductivity and solderability for ease of assembly.

Terminal Position: SINGLE

Single terminal position simplifies the connection process and ensures proper alignment in the circuit.

Case Connection: ISOLATED

Isolated case connection helps prevent short circuits and enhances the overall safety of the diodes.

Peak Reflow Temperature °C: 235

Peak reflow temperature of 235 °C allows for safe and reliable soldering during assembly.

Diode Type: RECTIFIER DIODE

Rectifier diode type ensures efficient conversion of AC to DC and is suitable for various power supply applications.

Maximum Forward Voltage (VF): 2.8 V

Low maximum forward voltage of 2.8 V minimizes power losses and improves energy efficiency in the circuit.

Maximum Output Current: 4 A

High maximum output current of 4 A allows for handling of higher power loads effectively.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides mechanical strength and reliability for secure connections in PCBs.

No. of Elements: 2

2 elements offer redundancy and improve reliability in the diode's operation within the circuit.

Maximum Repetitive Peak Reverse Voltage: 600 V

High maximum repetitive peak reverse voltage of 600 V ensures surge protection and safe operation in high voltage applications.

Maximum Non Repetitive Peak Forward Current: 100 A

High maximum non-repetitive peak forward current of 100 A enables handling of short-term power surges effectively.

Diode Element Material: SILICON

Silicon diode element material offers reliability, stability, and high performance in various electronic circuits.

Technical Specifications

Diodes & Rectifiers MURHF860CT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.8 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MURHF860CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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