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MURHB860CTG

Onsemi

MURHB860CTG by Onsemi

MURHB860CTG by Onsemi is a common cathode diode with 2 elements, featuring a max reverse recovery time of 0.035 us. Ideal for high voltage ultra fast recovery power applications, it has a max operating temperature of 175 °C and can handle a max output current of 4A.

Median Price

$1.270

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6 parts In-Stock

1+ parts

-

100+ parts

$1.270

1k+ parts

$1.050

10k+ parts

$0.940

6

-

$1.270

$1.050

$0.940

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,436 parts In-Stock

1+ parts

$0.988

100+ parts

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1,436

$0.988

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Vyrian

USA . 8,110 parts In-Stock

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8,110

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Prism Electronics

USA . 5 parts In-Stock

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5

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Distributors (Availability)

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Corphita

USA . 1,208 parts In-Stock

1+ parts

$0.936

100+ parts

-

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1,208

$0.936

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Corohmni

South Africa . 376 parts In-Stock

1+ parts

$1.040

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-

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376

$1.040

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AZTECH Wire

Italy . 543 parts In-Stock

1+ parts

$15.910

100+ parts

-

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543

$15.910

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TANS Electronics

Latvia . 6,516 parts In-Stock

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6,516

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Kulean Microsystems

USA . 5,193 parts In-Stock

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5,193

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SupplyDigital Components

Austria . 888 parts In-Stock

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888

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UHIMA Technologies

Türkiye . 468 parts In-Stock

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468

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Problanco Electronics

Mexico . 156 parts In-Stock

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Overview

Unleash the power of high voltage ultra-fast recovery with the Onsemi MURHB860CTG diode rectifier. Manufactured by Onsemi, a leader in semiconductor technology, this common cathode diode offers exceptional quality and reliability. Ideal for a wide range of applications, this diode is designed to deliver maximum performance in a compact package. Experience the benefits of fast recovery time, high output current, and low forward voltage, making it the perfect choice for your power needs. Upgrade your electronics with the Onsemi MURHB860CTG and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body ensures durability and protection for the diodes and rectifiers, making them suitable for various high voltage applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for efficient and convenient circuit integration, simplifying design and assembly processes.

Maximum Reverse Recovery Time: 0.035 us

The ultra fast reverse recovery time of only 0.035 microseconds ensures minimal power loss and efficient operation, making this product ideal for high voltage applications.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Designed for high voltage ultra fast recovery power applications, this product is suitable for power electronics and industrial applications requiring quick and efficient power conversion.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175 °C, this product can withstand high temperature environments, ensuring reliable performance in various applications.

Maximum Forward Voltage (VF): 2.5 V

The low forward voltage of 2.5 volts minimizes power loss and improves efficiency, making this product a cost-effective choice for power electronics applications.

Technical Specifications

Diodes & Rectifiers MURHB860CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.5 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURHB860CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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