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MURHB840CTT4

Onsemi

MURHB840CTT4 by Onsemi

MURHB840CTT4 by Onsemi is a common cathode diode with ultra-fast recovery power for applications requiring high-speed performance. It features a max reverse recovery time of 0.028 us, can handle a max output current of 4A, and has a max repetitive peak reverse voltage of 400V. Ideal for use in environments with operating temperatures ranging from -65 to 175 °C.

Median Price

$0.932

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,528 parts In-Stock

1+ parts

-

100+ parts

$0.898

1k+ parts

$0.746

10k+ parts

$0.665

3,528

-

$0.898

$0.746

$0.665

DigiKey

USA . 3,528 parts In-Stock

1+ parts

-

100+ parts

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$1.120

10k+ parts

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3,528

-

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$1.120

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Verical

USA . 3,528 parts In-Stock

1+ parts

-

100+ parts

-

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$0.932

10k+ parts

-

3,528

-

-

$0.932

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Distributors (In-Stock)

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Digiode

USA . 821 parts In-Stock

1+ parts

$0.700

100+ parts

-

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821

$0.700

-

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Vyrian

USA . 2,252 parts In-Stock

1+ parts

$0.737

100+ parts

-

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2,252

$0.737

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Electronics Depot

USA . 783 parts In-Stock

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783

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ComSIT Distribution GmbH

Germany . 722 parts In-Stock

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722

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Distributors (Availability)

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Corphita

USA . 256 parts In-Stock

1+ parts

$0.663

100+ parts

-

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256

$0.663

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Corohmni

South Africa . 362 parts In-Stock

1+ parts

$0.737

100+ parts

-

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362

$0.737

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Component Stockers USA

USA . 4,220 parts In-Stock

1+ parts

$0.760

100+ parts

$0.720

1k+ parts

$0.650

10k+ parts

-

4,220

$0.760

$0.720

$0.650

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Microchip USA

USA . 8,178 parts In-Stock

1+ parts

$4.615

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8,178

$4.615

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QUARKTWIN TECHNOLOGY LTD

USA . 10,401 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Metaverse IC Inc.

Canada . 9,294 parts In-Stock

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Problanco Electronics

Mexico . 8,104 parts In-Stock

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Kepictronics

USA . 7,294 parts In-Stock

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Continental Prestige Electronics

USA . 3,528 parts In-Stock

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$0.826

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3,528

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$0.826

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Kulean Microsystems

USA . 1,711 parts In-Stock

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SupplyDigital Components

Austria . 1,400 parts In-Stock

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TANS Electronics

Latvia . 1,095 parts In-Stock

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1,095

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UHIMA Technologies

Türkiye . 790 parts In-Stock

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790

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Overview

Unlock the power of efficient and reliable energy management with the MURHB840CTT4 diode by Onsemi. Designed for ultra fast recovery power applications, this high-quality diode offers a common cathode configuration with two elements, maximizing performance and versatility. With a maximum output current of 4A and a peak repetitive peak reverse voltage of 400V, this diode ensures optimal functionality in a wide range of electronic systems. Trust in Onsemi's reputation for excellence and choose the MURHB840CTT4 for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making it suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy connection and integration into circuits requiring common cathode configuration with 2 elements.

Surface Mount: YES

Enables easy and efficient mounting on printed circuit boards, saving space and simplifying the manufacturing process.

Maximum Reverse Recovery Time: 0.028 us

Ultra-fast recovery time ensures efficient and reliable operation in high-speed power applications.

Maximum Operating Temperature: 175 °C

Can withstand high operating temperatures, making it suitable for demanding industrial environments.

Maximum Repetitive Peak Reverse Voltage: 400 V

Offers high reverse voltage capability, making it ideal for applications with high voltage requirements.

Technical Specifications

Diodes & Rectifiers MURHB840CTT4 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

3 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.028 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn80Pb20)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURHB840CTT4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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