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MURHB860CTT4G

Onsemi

MURHB860CTT4G by Onsemi

MURHB860CTT4G by Onsemi is a common cathode diode with 2 elements, featuring a max reverse recovery time of 0.035 us. Ideal for high voltage ultra fast recovery power applications, it has a max repetitive peak reverse voltage of 600V and can handle a max output current of 4A.

Median Price

$0.523

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 10 parts In-Stock

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$0.389

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Chip1Stop

Japan . 10 parts In-Stock

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$0.657

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$0.657

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Digiode

USA . 1,822 parts In-Stock

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$0.479

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Cyclops Electronics Ltd

UK . 10,500 parts In-Stock

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Vyrian

USA . 2,837 parts In-Stock

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Flip Electronics

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Bristol Electronics

USA . 115 parts In-Stock

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Distributors (Availability)

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Benley Electronics

USA . 14 parts In-Stock

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$0.250

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Continental Prestige Electronics

USA . 480 parts In-Stock

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$0.409

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Corphita

USA . 1,635 parts In-Stock

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$0.454

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Component Stockers USA

USA . 851 parts In-Stock

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$0.490

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$1.180

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851

$0.490

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Corohmni

South Africa . 458 parts In-Stock

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$0.504

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AZTECH Wire

Italy . 766 parts In-Stock

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 8,042 parts In-Stock

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Kepictronics

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Perfect Parts

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SupplyDigital Components

Austria . 1,586 parts In-Stock

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Problanco Electronics

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TANS Electronics

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UHIMA Technologies

Türkiye . 77 parts In-Stock

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Overview

Experience the exceptional quality and reliability of Onsemi's MURHB860CTT4G diode rectifier, designed for high voltage ultra-fast recovery power applications. With a common cathode configuration and two elements, this small outline package offers customers the perfect solution for their electronic needs. Benefit from fast reverse recovery time, high output current, and a wide operating temperature range, all in a durable plastic/epoxy package. Trust Onsemi to deliver top-notch performance and value with the MURHB860CTT4G diode rectifier.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the elements inside, making it suitable for various environments.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy integration into circuit designs and offers flexibility in use.

Maximum Reverse Recovery Time: 0.035 us

Ensures fast switching performance, making it ideal for high-speed applications.

Package Shape: RECTANGULAR

Saves space and allows for efficient placement on circuit boards.

Surface Mount: YES

Facilitates easy installation on surface-mounted circuit boards.

Maximum Operating Temperature: 175 °C

Can operate in high-temperature environments without compromising performance.

Maximum Repetitive Peak Reverse Voltage: 600 V

Suitable for high-voltage applications, ensuring reliability and safety.

Maximum Forward Voltage (VF): 2.5 V

Low forward voltage drop helps in minimizing power losses and improving efficiency.

Terminal Finish: MATTE TIN

Provides a reliable and durable terminal finish, ensuring good electrical conductivity.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications, ensuring reliable performance.

Technical Specifications

Diodes & Rectifiers MURHB860CTT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.5 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURHB860CTT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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