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MURHB840CT

Onsemi

MURHB840CT by Onsemi

MURHB840CT by Onsemi is a common cathode diode with ultra-fast recovery power for applications requiring high-speed performance. It features a max reverse recovery time of 0.028 us, max output current of 4A, and a max repetitive peak reverse voltage of 400V. Ideal for use in circuits where fast switching and high efficiency are crucial.

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Vyrian

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Digiode

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Connector Distribution Corp

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Right Parts Inc.

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R&J Components

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Electronic Expediters

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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First Choice Components Inc.

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LWI Electronics Inc

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PC Components Company LLC

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Bristol Electronics

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Kepictronics

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Kulean Microsystems

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Problanco Electronics

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Overview

Unleash the power of innovation with the MURHB840CT by Onsemi. This diode & rectifier is a game-changer in the industry, offering ultra-fast recovery power and a maximum repetitive peak reverse voltage of 400V. With its small outline package style and common cathode configuration, this product is perfect for a wide range of applications. Trust Onsemi's expertise and quality manufacturing to deliver top-notch performance and reliability. Experience the benefits of this cutting-edge technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material for easy handling and long-lasting performance.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements provides efficient operation and high performance.

Maximum Reverse Recovery Time: 0.028 us

Ultra-fast reverse recovery time ensures quick response and minimal losses.

Maximum Operating Temperature: 175 °C

High operating temperature allows for reliable performance in tough conditions.

Terminal Finish: Tin/Lead (Sn80Pb20)

Tin/lead terminal finish ensures good solderability and connection.

Maximum Power Dissipation: 3 W

High power dissipation capability for handling heavy loads and maintaining efficiency.

Diode Type: RECTIFIER DIODE

Rectifier diode design for converting AC to DC with low voltage drop and high efficiency.

Maximum Repetitive Peak Reverse Voltage: 400 V

High reverse voltage rating for withstanding voltage spikes and surges.

Maximum Non Repetitive Peak Forward Current: 100 A

High forward current rating for handling large current surges with ease.

Diode Element Material: SILICON

Silicon material for efficient conduction and reliable performance.

Technical Specifications

Diodes & Rectifiers MURHB840CT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

3 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.028 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn80Pb20)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURHB840CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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