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MURH860CT

Onsemi

MURH860CT by Onsemi

MURH860CT by Onsemi is a common cathode diode with ultra-fast recovery power. It has a max output current of 4A and a max repetitive peak reverse voltage of 600V. Ideal for applications requiring high-speed rectification in electronic circuits.

Median Price

$0.846

Lifecycle Status

Suppliers In-Stock

21

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1k+

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Rochester

USA . 8 parts In-Stock

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$0.846

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$0.702

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$0.626

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$0.626

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Digiode

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Bristol Electronics

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Rotakorn

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Electronic Expediters

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Electronics Depot

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Magnum Semiconductors LLP

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Standard Data Resources

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Resion

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Prism Electronics

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Sea View Technologies

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R&J Components

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Inland Empire Components Inc.

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Microfarads

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Corphita

USA . 2,382 parts In-Stock

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Corohmni

South Africa . 233 parts In-Stock

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Component Stockers USA

USA . 5 parts In-Stock

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$0.720

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

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Problanco Electronics

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ChipstoGo Electronic ltd

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TANS Electronics

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UHIMA Technologies

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Perfect Parts

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Schahn Electronic Components

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Overview

Discover the MURH860CT by Onsemi, a top-quality diode & rectifier that offers ultra-fast recovery power for a wide range of applications. With a common cathode configuration and two elements, this product delivers exceptional performance and reliability. Manufactured by Onsemi, known for their superior products, the MURH860CT is designed to withstand high operating temperatures and provide a maximum output current of 4A. Experience the value and benefits of this product today and elevate your projects with the best in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material provides durability and protection for the diode, making it suitable for various applications.

Maximum Reverse Recovery Time: 0.035 us

The ultra-fast reverse recovery time ensures efficient and quick operations in applications requiring fast switching speeds.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand heat and operate reliably in challenging environments.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this product is well-suited for converting AC to DC current efficiently and effectively.

Maximum Output Current: 4 A

With a high maximum output current, this diode can handle moderate to high power applications with ease.

Maximum Repetitive Peak Reverse Voltage: 600 V

The high peak reverse voltage rating allows the diode to be used in applications where high voltage protection is required.

Technical Specifications

Diodes & Rectifiers MURH860CT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURH860CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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