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MURHB840CTT4G

Onsemi

MURHB840CTT4G by Onsemi

MURHB840CTT4G by Onsemi is a common cathode diode with ultra-fast recovery power for applications requiring high-speed performance. It features a max reverse recovery time of 0.028 us, a max output current of 4A, and a max repetitive peak reverse voltage of 400V. Ideal for use in electronics where fast switching capabilities are essential.

Median Price

$0.138

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 350 parts In-Stock

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$0.138

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$0.126

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$0.113

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Digiode

USA . 1,210 parts In-Stock

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$0.131

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Vyrian

USA . 4,420 parts In-Stock

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Flip Electronics

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ACDS - Activité Composants Distribution Service

France . 240 parts In-Stock

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Bristol Electronics

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240

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Dan-Mar Components

USA . 240 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 2,495 parts In-Stock

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$0.124

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$0.138

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$0.126

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$0.113

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350

$0.138

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$0.113

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Corohmni

South Africa . 276 parts In-Stock

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AZTECH Wire

Italy . 241 parts In-Stock

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$12.160

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SupplyDigital Components

Austria . 8,382 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,257 parts In-Stock

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Kulean Microsystems

USA . 6,185 parts In-Stock

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Kepictronics

USA . 5,246 parts In-Stock

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TANS Electronics

Latvia . 5,013 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Perfect Parts

USA . 2,677 parts In-Stock

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Problanco Electronics

Mexico . 2,512 parts In-Stock

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UHIMA Technologies

Türkiye . 819 parts In-Stock

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ChipstoGo Electronic ltd

UK . 800 parts In-Stock

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Overview

Unlock the power of efficiency and reliability with the MURHB840CTT4G by Onsemi. This diode and rectifier combo boasts top-notch quality and performance, making it a standout choice for ultra-fast recovery power applications. With a common cathode configuration and small outline package style, this product offers seamless integration and maximum power dissipation of 3W. Trust Onsemi's reputation for excellence and elevate your projects with the MURHB840CTT4G's superior capabilities. Experience the value and benefits this product brings to your work today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diodes, making them suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient current flow and voltage regulation in the circuit.

Maximum Reverse Recovery Time: 0.028 us

Ultra fast reverse recovery time ensures minimal power loss and improved efficiency in power applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into electronic circuits.

Maximum Output Current: 4 A

High output current capacity of 4A makes these diodes suitable for power applications that require high current flow.

Maximum Repetitive Peak Reverse Voltage: 400 V

High peak reverse voltage rating of 400V provides protection against voltage spikes in the circuit.

Technical Specifications

Diodes & Rectifiers MURHB840CTT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

3 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.028 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURHB840CTT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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