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MURHF860CTG

Onsemi

MURHF860CTG by Onsemi

MURHF860CTG by Onsemi is a common cathode diode with ultra-fast recovery power, featuring a max reverse recovery time of 0.035 us and a max output current of 4A. Ideal for applications requiring high-speed rectification in electronic circuits, this diode has a max repetitive peak reverse voltage of 600V and operates b/w -65 to 150 °C temperature range.

Median Price

$1.140

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 90 parts In-Stock

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$1.140

100+ parts

$1.070

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$0.970

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90

$1.140

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$0.970

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Distributors (In-Stock)

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Digiode

USA . 1,679 parts In-Stock

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$1.083

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Vyrian

USA . 3,231 parts In-Stock

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Flip Electronics

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Chip Stock

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ACDS - Activité Composants Distribution Service

France . 50 parts In-Stock

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First Choice Components Inc.

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Corphita

USA . 1,356 parts In-Stock

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$1.026

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Corohmni

South Africa . 147 parts In-Stock

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$1.140

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Microchip USA

USA . 470 parts In-Stock

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$14.300

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$14.300

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AZTECH Wire

Italy . 695 parts In-Stock

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$14.750

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Kepictronics

USA . 13,000 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 7,217 parts In-Stock

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Perfect Parts

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SupplyDigital Components

Austria . 5,407 parts In-Stock

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Kulean Microsystems

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TANS Electronics

Latvia . 920 parts In-Stock

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UHIMA Technologies

Türkiye . 81 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the MURHF860CTG diode rectifier. This cutting-edge product offers ultra-fast recovery power for a wide range of applications, providing customers with efficient performance and peace of mind. With a maximum output current of 4A and a maximum repetitive peak reverse voltage of 600V, this product is designed to exceed expectations. Trust Onsemi to deliver innovative solutions that meet your needs and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and mechanical strength, making the diode more durable and reliable in various operating conditions.

Maximum Reverse Recovery Time: 0.035 us

Ensures fast switching performance, which is essential in applications where quick response times are required.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without compromising performance, making it suitable for demanding applications.

Maximum Repetitive Peak Reverse Voltage: 600 V

Can handle high reverse voltages, providing protection against reverse polarity and ensuring the safety of the circuit.

Maximum Output Current: 4 A

Capable of handling medium to high current loads, making it suitable for power applications that require significant power handling capacity.

Technical Specifications

Diodes & Rectifiers MURHF860CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.8 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MURHF860CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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