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MURHD560T4G

Onsemi

MURHD560T4G by Onsemi

MURHD560T4G by Onsemi is a single rectifier diode with ultra-fast recovery time of 0.03 us and max output current of 5A. It operates b/w -65 to 175 °C, has a peak reflow temp of 260 °C, and a max repetitive peak reverse voltage of 600V. Ideal for applications requiring high-speed switching in electronic circuits.

Median Price

$0.760

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 3,888 parts In-Stock

1+ parts

$0.470

100+ parts

-

1k+ parts

-

10k+ parts

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3,888

$0.470

-

-

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Mouser Electronics

USA . 1,635 parts In-Stock

1+ parts

$0.760

100+ parts

-

1k+ parts

$0.617

10k+ parts

$0.587

1,635

$0.760

-

$0.617

$0.587

DigiKey

USA . 10,027 parts In-Stock

1+ parts

$0.770

100+ parts

$0.629

1k+ parts

-

10k+ parts

$0.558

10,027

$0.770

$0.629

-

$0.558

Arrow

USA . 2,500 parts In-Stock

1+ parts

$0.925

100+ parts

$0.740

1k+ parts

$0.527

10k+ parts

$0.527

2,500

$0.925

$0.740

$0.527

$0.527

Avnet

USA . 7,500 parts In-Stock

1+ parts

-

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7,500

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Verical

USA . 3,893 parts In-Stock

1+ parts

-

100+ parts

$0.641

1k+ parts

$0.605

10k+ parts

$0.588

3,893

-

$0.641

$0.605

$0.588

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,216 parts In-Stock

1+ parts

$0.740

100+ parts

-

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2,216

$0.740

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Digiode

USA . 1,881 parts In-Stock

1+ parts

$0.740

100+ parts

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1,881

$0.740

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Chip Stock

USA . 26,460 parts In-Stock

1+ parts

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26,460

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ComSIT Distribution GmbH

Germany . 1,339 parts In-Stock

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1,339

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ComSIT USA

USA . 1,339 parts In-Stock

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1,339

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Distributors (Availability)

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Corohmni

South Africa . 151 parts In-Stock

1+ parts

$0.508

100+ parts

-

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151

$0.508

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Ampacity Inc.

Singapore . 19,013 parts In-Stock

1+ parts

$0.570

100+ parts

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19,013

$0.570

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Corphita

USA . 1,889 parts In-Stock

1+ parts

$0.701

100+ parts

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1,889

$0.701

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Microchip USA

USA . 3,398 parts In-Stock

1+ parts

$3.964

100+ parts

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3,398

$3.964

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,165 parts In-Stock

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26,165

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Perfect Parts

USA . 14,809 parts In-Stock

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14,809

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Problanco Electronics

Mexico . 6,714 parts In-Stock

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6,714

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SupplyDigital Components

Austria . 6,710 parts In-Stock

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6,710

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Kepictronics

USA . 5,000 parts In-Stock

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5,000

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Kulean Microsystems

USA . 4,192 parts In-Stock

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4,192

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TANS Electronics

Latvia . 875 parts In-Stock

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875

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GreenTree Electronics

Israel . 103 parts In-Stock

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103

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UHIMA Technologies

Türkiye . 55 parts In-Stock

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55

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Overview

Enhance your electronic projects with the MURHD560T4G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality diodes and rectifiers for various applications. The MURHD560T4G boasts ultra-fast recovery time and high output current, making it ideal for demanding tasks. With a wide operating temperature range and reliable performance, this rectifier diode ensures efficient power management in all conditions. Trust Onsemi's expertise and choose the MURHD560T4G for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring long-lasting performance.

Config: SINGLE

Simplified design with a single configuration for easy integration into various electronic circuits.

Surface Mount: YES

Facilitates easy and efficient mounting onto circuit boards, saving space and reducing assembly time.

Maximum Reverse Recovery Time: 0.03 us

Ultra-fast reverse recovery time allows for high-speed switching and efficient operation.

Maximum Reverse Current: 10 uA

Low reverse current ensures minimal power loss and enhances overall efficiency.

Package Shape: RECTANGULAR

Rectangular shape provides compatibility with standard electronic component layouts and mounting configurations.

No. of Terminals: 2

Simple two-terminal design for easy connectivity and integration into circuitry.

Package Style (Meter): SMALL OUTLINE

Compact size makes it suitable for applications where space is limited.

Application: ULTRA FAST RECOVERY

Ideal for high-speed applications requiring fast recovery time and efficient performance.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows for reliable performance in various environments.

Minimum Operating Temperature: -65 °C

Can withstand low temperatures, making it suitable for use in cold conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides good electrical conductivity and solderability for secure connections.

Terminal Position: SINGLE

Single terminal position for easy installation and connection.

Case Connection: CATHODE

Clearly defined cathode connection for proper orientation during installation.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures efficient soldering process with controlled time at peak reflow temperature.

Peak Reflow Temperature °C: 260

High peak reflow temperature for reliable solder joints and product longevity.

Diode Type: RECTIFIER DIODE

Specifically designed as a rectifier diode for efficient conversion of AC to DC current.

Maximum Forward Voltage (VF): 2.7 V

Low forward voltage drop for minimal power loss and energy efficiency.

Maximum Output Current: 5 A

Able to handle high output currents for demanding applications.

Terminal Form: GULL WING

Gull wing terminal form for secure mounting and electrical connection.

Maximum Repetitive Peak Reverse Voltage: 600 V

High peak reverse voltage rating for applications requiring voltage protection.

Maximum Non Repetitive Peak Forward Current: 50 A

Capable of handling high peak forward currents for transient protection.

Diode Element Material: SILICON

Silicon material for reliable and stable diode performance.

Technical Specifications

Diodes & Rectifiers MURHD560T4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.7 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

.03 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURHD560T4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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