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MURHB860CTT4

Onsemi

MURHB860CTT4 by Onsemi

MURHB860CTT4 by Onsemi is a common cathode diode with 2 elements, featuring a max reverse recovery time of 0.035 us. Ideal for high voltage ultra fast recovery power applications, it has a max operating temperature of 175 °C and can handle a max output current of 4A.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,362 parts In-Stock

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Digiode

USA . 1,033 parts In-Stock

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1,033

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SupplyDigital Components

Austria . 4,415 parts In-Stock

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Kulean Microsystems

USA . 2,222 parts In-Stock

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Corphita

USA . 2,068 parts In-Stock

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Problanco Electronics

Mexico . 1,580 parts In-Stock

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TANS Electronics

Latvia . 1,145 parts In-Stock

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UHIMA Technologies

Türkiye . 902 parts In-Stock

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Corohmni

South Africa . 295 parts In-Stock

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Overview

Experience the superior quality and reliability of the MURHB860CTT4 diode by Onsemi. With a focus on high voltage ultra-fast recovery power applications, this common cathode diode offers customers unmatched performance and efficiency. Onsemi's reputation for excellence in the industry ensures that you are getting a top-of-the-line product that will meet your needs. Trust in the expertise of Onsemi and enjoy the benefits of this diode's fast recovery time, high output current, and durable construction. Upgrade your power systems with the MURHB860CTT4 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, making them suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easy integration into circuits, and presence of 2 elements increases efficiency.

Maximum Reverse Recovery Time: 0.035 us

Ultra fast recovery time ensures minimal power loss and efficient operation.

Surface Mount: YES

Surface mount capability makes installation and replacement easier and more convenient.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Forward Voltage (VF): 2.5 V

Low forward voltage drop minimizes power loss and improves overall efficiency.

Technical Specifications

Diodes & Rectifiers MURHB860CTT4 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.5 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURHB860CTT4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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