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MURHB860CT

Onsemi

MURHB860CT by Onsemi

MURHB860CT by Onsemi is a common cathode diode with 2 elements, featuring a max reverse recovery time of 0.035 us. Ideal for high voltage ultra fast recovery power applications, it has a max operating temperature of 175 °C and can handle a max output current of 4A.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 2,401 parts In-Stock

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Digiode

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EMSNET

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Component Stockers USA

USA . 244 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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TANS Electronics

Latvia . 6,058 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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QUARKTWIN TECHNOLOGY LTD

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 1,170 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 329 parts In-Stock

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Corohmni

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Overview

Experience the superior quality and reliability of the MURHB860CT diode by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge technology and innovation in every product they create. Ideal for high voltage ultra-fast recovery power applications, this diode offers customers unparalleled performance and efficiency. Trust Onsemi to provide you with the best-in-class solutions for your electronic needs. Benefit from the value and advantages that the MURHB860CT diode brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the diodes, making them durable and reliable.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient and balanced current flow, enhancing performance.

Surface Mount: YES

Surface mount design allows for easy and convenient installation on circuit boards, saving space and simplifying assembly.

Maximum Reverse Recovery Time: 0.035 us

Ultra-fast reverse recovery time ensures quick switching and efficient operation, ideal for high voltage applications.

Package Shape: RECTANGULAR

Rectangular package shape is compact and space-saving, suitable for various electronic devices and circuits.

No. of Terminals: 2

2 terminals simplify connection and installation, making the diode easy to use for circuit design.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Designed for high voltage power applications requiring ultra-fast recovery, ensuring reliable and efficient operation.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for reliable performance in various environmental conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish provides good conductivity and solderability, ensuring secure connections in the circuit.

Terminal Position: SINGLE

Single terminal position simplifies the connection process and ensures proper orientation during installation.

Case Connection: CATHODE

Cathode case connection ensures proper polarity and correct circuit configuration, preventing damage to the diode.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature minimizes thermal stress on the diode during soldering, enhancing reliability.

Peak Reflow Temperature °C: 235

High peak reflow temperature allows for efficient soldering and ensures secure connections in the circuit.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC to DC voltage, making it ideal for power supply applications.

Maximum Forward Voltage (VF): 2.5 V

Low maximum forward voltage drop minimizes power loss and improves efficiency in the circuit.

Maximum Output Current: 4 A

High maximum output current capability allows for reliable performance in power applications requiring high current.

Terminal Form: GULL WING

Gull wing terminal form provides secure and reliable connections, ensuring proper functionality in the circuit.

No. of Elements: 2

2 elements provide redundancy and balance in the diode structure, enhancing reliability and performance.

Maximum Repetitive Peak Reverse Voltage: 600 V

High maximum repetitive peak reverse voltage capability makes the diode suitable for high voltage applications.

Maximum Non Repetitive Peak Forward Current: 100 A

High maximum non-repetitive peak forward current ensures reliable performance in power applications requiring high current pulses.

Diode Element Material: SILICON

Silicon diode element material provides good electrical properties and reliability, making it a common choice for rectifier diodes.

Technical Specifications

Diodes & Rectifiers MURHB860CT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.5 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURHB860CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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