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MURHD560W1T4G

Onsemi

MURHD560W1T4G by Onsemi

MURHD560W1T4G by Onsemi is a single rectifier diode with ultra-fast recovery time of 0.03 us and max output current of 5A. It operates in temperatures ranging from -65 to 175 °C, making it suitable for high-speed applications. The diode has a max repetitive peak reverse voltage of 600V, ideal for various electronic circuits.

Median Price

$1.262

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 4 parts In-Stock

1+ parts

$0.261

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4

$0.261

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Chip1Stop

Japan . 4 parts In-Stock

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$1.340

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4

$1.340

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Rochester

USA . 6,467 parts In-Stock

1+ parts

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$1.220

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$1.010

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$0.903

6,467

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$1.220

$1.010

$0.903

DigiKey

USA . 6,467 parts In-Stock

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$1.530

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6,467

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$1.530

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Verical

USA . 4,174 parts In-Stock

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$1.262

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$1.129

4,174

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$1.129

Distributors (In-Stock)

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Digiode

USA . 1,523 parts In-Stock

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$0.873

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$0.873

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Vyrian

USA . 741 parts In-Stock

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$0.919

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741

$0.919

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Nova Conductors

Japan . 44 parts In-Stock

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$1.101

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$1.101

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Flip Electronics

USA . 10,000 parts In-Stock

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Bristol Electronics

USA . 2,375 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,332 parts In-Stock

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ComSIT USA

USA . 2,332 parts In-Stock

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Corphita

USA . 1,759 parts In-Stock

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$0.827

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$0.827

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Corohmni

South Africa . 448 parts In-Stock

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$0.919

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$0.919

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Microchip USA

USA . 7,150 parts In-Stock

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$6.666

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$6.666

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Lixinc

USA . 10,147 parts In-Stock

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Perfect Parts

USA . 8,400 parts In-Stock

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SupplyDigital Components

Austria . 4,697 parts In-Stock

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Problanco Electronics

Mexico . 4,555 parts In-Stock

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Kepictronics

USA . 2,500 parts In-Stock

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TANS Electronics

Latvia . 1,773 parts In-Stock

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Kulean Microsystems

USA . 766 parts In-Stock

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UHIMA Technologies

Türkiye . 87 parts In-Stock

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Overview

Enhance the performance and reliability of your electronic devices with the MURHD560W1T4G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and durability in their diodes & rectifiers. This ultra-fast recovery diode is perfect for applications where speed and efficiency are crucial. With a maximum forward voltage of 2.7V and a maximum output current of 5A, this product offers exceptional value and benefits to customers looking for high-quality components. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the diode, making it suitable for a variety of applications.

Maximum Reverse Recovery Time: 0.03 us

The ultra-fast reverse recovery time ensures efficient and quick operation of the diode, making it ideal for high-speed applications.

Maximum Reverse Current: 10 uA

Low reverse current results in minimal power loss when the diode is in the non-conducting state, making it energy-efficient.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature range allows the diode to be used in a wide range of environmental conditions without performance degradation.

Maximum Forward Voltage (VF): 2.7 V

The low forward voltage drop ensures efficient conduction of current through the diode, minimizing power loss and heat dissipation.

Maximum Output Current: 5 A

With a high maximum output current capacity, this diode can handle heavy loads and high current applications effectively.

Technical Specifications

Diodes & Rectifiers MURHD560W1T4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.7 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

.03 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURHD560W1T4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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