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MR750G

Onsemi

MR750G by Onsemi

The Onsemi MR750G is a Schottky rectifier diode with 50V reverse voltage, 6A output current, and 1.25V forward voltage. It comes in a plastic/epoxy package style with tin terminal finish and axial position. Ideal for applications requiring high efficiency and low power loss in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 29,000 parts In-Stock

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USA . 12,241 parts In-Stock

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AZTECH Wire

Italy . 953 parts In-Stock

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Component Stockers USA

USA . 512 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 21,430 parts In-Stock

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TANS Electronics

Latvia . 8,064 parts In-Stock

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SupplyDigital Components

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Kulean Microsystems

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UHIMA Technologies

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Problanco Electronics

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Overview

Discover the power of the MR750G by Onsemi, a top-quality rectifier diode that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this diode is perfect for a wide range of applications. With a maximum output current of 6 A and a maximum forward voltage of 1.25 V, this diode is designed to deliver exceptional results. Whether you're looking to improve efficiency in your electronics or enhance the performance of your devices, the MR750G is the perfect solution. Upgrade your systems today with the MR750G and experience the difference quality makes!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material is durable and provides good protection for the diode, ensuring longevity and reliability.

Configuration: SINGLE

The single configuration makes it easy to use and install, simplifying the overall design of the circuit.

Package Shape: ROUND

The round shape allows for easy mounting and placement within the circuit, making it versatile and adaptable.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature allows for the diode to be used in a variety of applications without the risk of overheating.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts alternating current (AC) to direct current (DC), making it ideal for power supply applications.

Maximum Forward Voltage (VF): 1.25 V

The low maximum forward voltage results in minimal power loss and energy efficiency, which is beneficial for electronic devices.

Maximum Output Current: 6 A

The high maximum output current allows for the diode to handle heavy loads, making it suitable for high-power applications.

Technology: SCHOTTKY

The Schottky technology provides fast switching speeds and low forward voltage drop, improving overall efficiency and performance.

Maximum Repetitive Peak Reverse Voltage: 50 V

The high maximum repetitive peak reverse voltage ensures reliable operation and protection against reverse voltage spikes.

Diode Element Material: SILICON

Silicon is a common and reliable diode material known for its stability and consistent performance over time.

Technical Specifications

Diodes & Rectifiers MR750G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

O-PADB-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

DISK BUTTON

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

MR750G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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