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MR750RLG

Onsemi

MR750RLG by Onsemi

MR750RLG by Onsemi is a Schottky rectifier diode with max forward voltage of 1.25V and output current of 6A. It operates at up to 175 °C, making it ideal for high-temperature applications. With a peak reverse voltage of 50V, it suits various electronic circuits requiring efficient power management.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 37,000 parts In-Stock

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Vyrian

USA . 4,879 parts In-Stock

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Digiode

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First Choice Components Inc.

USA . 1,772 parts In-Stock

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AZTECH Wire

Italy . 1,040 parts In-Stock

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TANS Electronics

Latvia . 7,347 parts In-Stock

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SupplyDigital Components

Austria . 5,600 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 3,766 parts In-Stock

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Kulean Microsystems

USA . 3,022 parts In-Stock

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Corphita

USA . 2,472 parts In-Stock

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UHIMA Technologies

Türkiye . 552 parts In-Stock

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Corohmni

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Overview

Experience the next level of performance and reliability with the MR750RLG by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality diodes and rectifiers that are trusted by professionals worldwide. The MR750RLG offers unparalleled value with its advanced technology and high maximum output current of 6 A, making it ideal for a wide range of applications. Whether you're in need of a rectifier diode for your power supply or electronic device, trust Onsemi to provide the superior product you need for optimal performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures without damage, ensuring reliable performance in different environments.

Maximum Output Current: 6 A

Capable of handling high currents, making it suitable for applications that require a reliable power supply.

Technology: SCHOTTKY

Schottky diodes have fast switching speeds and low forward voltage drop, making them efficient for various applications.

Maximum Repetitive Peak Reverse Voltage: 50 V

Can handle reverse voltages up to 50 V, providing protection against reverse voltage spikes in the circuit.

Technical Specifications

Diodes & Rectifiers MR750RLG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

O-PADB-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

DISK BUTTON

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

MR750RLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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