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MR750RL

Onsemi

MR750RL by Onsemi

The Onsemi MR750RL is a Schottky rectifier diode with 50V reverse voltage, 6A output current, and 1.25V forward voltage. It comes in an axial package style for applications requiring high-speed switching and low power loss in electronic circuits. Ideal for use in power supplies, converters, and battery chargers due to its high efficiency and fast response time.

Median Price

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Lifecycle Status

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8

In-Stock Inventory

1k+

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Vyrian

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Digiode

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Diverse Electronics

Canada . 1,250 parts In-Stock

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J2 Sourcing AB

Sweden . 800 parts In-Stock

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EPE Components Inc.

USA . 537 parts In-Stock

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Bristol Electronics

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R&J Components

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Kulean Microsystems

USA . 3,697 parts In-Stock

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Problanco Electronics

Mexico . 1,956 parts In-Stock

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TANS Electronics

Latvia . 1,725 parts In-Stock

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Corphita

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Corohmni

South Africa . 374 parts In-Stock

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UHIMA Technologies

Türkiye . 69 parts In-Stock

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SupplyDigital Components

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Overview

Discover the MR750RL by Onsemi, a top-of-the-line rectifier diode that guarantees quality and reliability. As a leading manufacturer in the industry, Onsemi delivers cutting-edge technology with a focus on customer satisfaction. The MR750RL is perfect for a wide range of applications, offering a maximum output current of 6A and a maximum forward voltage of 1.25V. With its Schottky technology and durable construction, this diode ensures optimal performance and efficiency. Upgrade your electronic projects with the MR750RL and experience the unbeatable value it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan for the product.

Config: SINGLE

Simplified configuration makes it easy to install and use in various applications.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for use in diverse environments.

Diode Type: RECTIFIER DIODE

Efficiently converts alternating current (AC) to direct current (DC) with minimal voltage loss.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speed compared to standard diodes, enhancing overall performance.

Maximum Repetitive Peak Reverse Voltage: 50 V

Provides ample voltage protection, making it suitable for a wide range of applications.

Technical Specifications

Diodes & Rectifiers MR750RL attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

O-PADB-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

DISK BUTTON

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MR750RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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