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MR756G

Onsemi

MR756G by Onsemi

The Onsemi MR756G is a Schottky rectifier diode with 600V reverse voltage and 6A output current. It has a max forward voltage of 1.25V and operates at temperatures up to 175 °C. Ideal for applications requiring high power efficiency in a compact round disk button package.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Chip Stock

USA . 52,000 parts In-Stock

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Vyrian

USA . 8,540 parts In-Stock

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USA . 372 parts In-Stock

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Sea View Technologies

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Bristol Electronics

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AZTECH Wire

Italy . 703 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 22,525 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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TANS Electronics

Latvia . 2,210 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 1,310 parts In-Stock

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UHIMA Technologies

Türkiye . 343 parts In-Stock

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Overview

Discover the exceptional quality and reliability of the MR756G by Onsemi, a leading manufacturer in the field of Diodes & Rectifiers. This powerful RECTIFIER DIODE offers a maximum output current of 6A and a maximum repetitive peak reverse voltage of 600V, making it ideal for a wide range of applications. With its SCHOTTKY technology and efficient design, this diode provides customers with superior performance and durability. Trust Onsemi to deliver cutting-edge solutions that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package provides good durability and protection for the diode, making it a reliable choice for various applications.

Configuration: SINGLE

The single configuration simplifies the design and installation of the diode, making it easy to integrate into electronic circuits.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature of 175 °C, this diode can withstand elevated temperatures in industrial and automotive applications.

Technology: SCHOTTKY

The Schottky technology in this diode results in low forward voltage drop and fast switching speeds, making it efficient and effective for power rectification.

Maximum Forward Voltage (VF): 1.25 V

The low maximum forward voltage of 1.25V ensures minimal power loss and efficient operation of the diode in various electronic circuits.

Maximum Output Current: 6 A

With a maximum output current of 6A, this diode can handle high current loads without overheating, ensuring reliability in power supply applications.

Maximum Repetitive Peak Reverse Voltage: 600 V

The high maximum repetitive peak reverse voltage of 600V allows the diode to withstand high reverse voltage conditions, ensuring protection against voltage spikes.

Technical Specifications

Diodes & Rectifiers MR756G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

O-PADB-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

DISK BUTTON

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

10

Trade Compliance

MR756G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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