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MR754

Onsemi

MR754 by Onsemi

The Onsemi MR754 is a Schottky rectifier diode with a max forward voltage of 1.25V and output current of 6A. It has a max repetitive peak reverse voltage of 400V, making it ideal for applications requiring high efficiency and fast switching capabilities in electronic circuits. The diode's package style is disk button, suitable for use in various electronic devices where space-saving design is essential.

Median Price

$0.175

Lifecycle Status

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1k+

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Arrow

USA . 1 parts In-Stock

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Chip1Stop

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Digiode

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Component Electronics Inc.

Canada . 4 parts In-Stock

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TEDSS.com

USA . 100 parts In-Stock

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American Microsemiconductor Inc.

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Corphita

USA . 1,791 parts In-Stock

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Corohmni

South Africa . 393 parts In-Stock

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Continental Prestige Electronics

USA . 468 parts In-Stock

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Microchip USA

USA . 2,129 parts In-Stock

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Overview

Power up your projects with the MR754 by Onsemi! This high-quality rectifier diode offers reliable performance and durability, thanks to Onsemi's reputation for excellence. Ideal for a wide range of applications in electronics, this diode delivers a maximum output current of 6A and a peak repetitive reverse voltage of 400V, making it perfect for power supply circuits, battery chargers, and more. Say goodbye to downtime and hello to efficiency with the MR754 - your go-to choice for superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good structural integrity and temperature resistance for reliable performance in various environments.

Configuration: SINGLE

Simplifies circuit design by offering a single diode for rectification purposes.

Package Shape: ROUND

Facilitates easy mounting and installation in circular configurations.

Number of Terminals: 2

Simplifies connections and reduces complexity in circuit layouts.

Package Style: DISK BUTTON

Allows for compact integration in electronic assemblies such as meters.

Maximum Operating Temperature: 175 °C

Ensures stable performance even in high-temperature conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

Facilitates soldering and provides good electrical conductivity.

Terminal Position: AXIAL

Enables easy alignment and connection in the circuit setup.

Case Connection: ISOLATED

Ensures electrical insulation and prevents short circuits.

Maximum Forward Voltage (VF): 1.25 V

Offers low voltage drop for efficient rectification.

Maximum Output Current: 6 A

Suits applications requiring moderate current handling capabilities.

Technology: SCHOTTKY

Provides fast switching speeds and low forward voltage drop for improved efficiency.

Terminal Form: WIRE

Allows for easy connection to external circuits or components.

Maximum Repetitive Peak Reverse Voltage: 400 V

Suitable for applications requiring high reverse voltage ratings.

Maximum Non Repetitive Peak Forward Current: 400 A

Capable of handling high surge currents for increased reliability.

Diode Element Material: SILICON

Offers good electrical properties and reliability for rectification purposes.

Technical Specifications

Diodes & Rectifiers MR754 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

O-PADB-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

DISK BUTTON

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MR754 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-110-3046, 5961011103046, 5961-00-504-0409, 5961005040409, 5961-01-164-8409, 5961011648409, 5961-01-350-7227, 5961013507227, 5961-01-651-9617, 5961016519617

NIIN

011103046, 005040409, 011648409, 013507227, 016519617

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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