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MR751RL

Onsemi

MR751RL by Onsemi

MR751RL by Onsemi is a Schottky rectifier diode with 100V reverse voltage and 6A output current. It has a max forward voltage of 1.25V and operates at temperatures up to 175 °C. Ideal for applications requiring high efficiency and fast switching, such as power supplies and battery chargers.

Median Price

$1.200

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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DF Sales Co.

USA . 26 parts In-Stock

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$1.200

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DF Sales Co.

USA . 26 parts In-Stock

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Chip Stock

USA . 51,000 parts In-Stock

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Vyrian

USA . 1,487 parts In-Stock

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Digiode

USA . 1,446 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 34 parts In-Stock

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Corohmni

South Africa . 268 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 22,873 parts In-Stock

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TANS Electronics

Latvia . 6,363 parts In-Stock

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SupplyDigital Components

Austria . 4,827 parts In-Stock

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Kulean Microsystems

USA . 3,412 parts In-Stock

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Problanco Electronics

Mexico . 1,656 parts In-Stock

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UHIMA Technologies

Türkiye . 945 parts In-Stock

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Corphita

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Overview

Upgrade your electronic projects with the MR751RL diode from Onsemi. With its high-quality construction and reliable performance, this rectifier diode is a must-have for any DIY enthusiast or professional technician. Whether you're working on power supplies, inverters, or battery chargers, this Schottky diode offers superior efficiency and durability. Say goodbye to voltage drops and hello to seamless operation, thanks to the maximum forward voltage of 1.25V and output current of 6A. Trust Onsemi to deliver top-notch components that elevate your creations to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy package body material makes the product lightweight and durable, ideal for portable electronic devices.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature of 175 °C, this diode can withstand high temperatures and operate reliably in various environments.

Diode Type: RECTIFIER DIODE

Being a rectifier diode means it efficiently converts alternating current (AC) to direct current (DC), making it suitable for power supply applications.

Maximum Forward Voltage (VF): 1.25 V

The low maximum forward voltage of 1.25 V indicates minimal power losses and high efficiency in the forward conduction state.

Maximum Output Current: 6 A

With a maximum output current of 6 A, this diode can handle higher current loads, making it suitable for applications requiring higher power capabilities.

Technology: SCHOTTKY

Utilizing Schottky technology, this diode offers fast switching speeds, low forward voltage drop, and minimal reverse recovery time, making it ideal for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 100 V

The high maximum repetitive peak reverse voltage of 100 V ensures reliable performance in applications where reverse voltage protection is essential.

Maximum Non Repetitive Peak Forward Current: 400 A

With a high maximum non-repetitive peak forward current of 400 A, this diode can handle short-duration high current spikes without getting damaged, ensuring robust performance.

Diode Element Material: SILICON

The use of silicon as the diode element material provides good thermal stability, high reliability, and consistent performance over a wide temperature range.

Technical Specifications

Diodes & Rectifiers MR751RL attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

O-PADB-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

DISK BUTTON

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MR751RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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